Range Profiles of 50 to 400 Kev Xenon Ions in a Silicate Glass

KM WANG,BR SHI,HY GUO,JT LIU,XD LIU
DOI: https://doi.org/10.1088/0022-3727/23/7/017
1990-01-01
Journal of Physics D Applied Physics
Abstract:The range profiles of Xe ions implanted in a silicate glass at energies from 50 to 400 keV have been studied by the Rutherford backscattering technique. The data obtained are compared with the calculated values based on Biersack's angular diffusion model (1981). The results show that the measured mean projected range is in good agreement with the calculated value, but a marked improvement in the range straggling fit is obtained after including the second-order energy loss.
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