Abstract:We treat electronic dynamics at surfaces of nanostructured semiconductors induced by absorption of visible light using reduced density matrices and properties obtained from ab initio electronic structure calculations, to focus on two non-adiabatic phenomena: (a) how active electrons interacting non-adiabatically with atoms at the surface undergo electronic transitions and (b) how active electrons interacting by exchanging energy with excitons in the medium undergo a dissipative non-adiabatic dynamics. We test the effects on charge separation from varying oscillator strengths, non-adiabatic momentum couplings, the rates of relaxation of excited states coupled to the medium, temperature, and light wavelength. Varying the oscillator strength displays the interplay between competing relaxation and charge transfer dynamics. Varying the non-adiabatic momentum coupling between excited and final states demonstrates the importance of including enough vibrational levels to model the full dynamics of the system and further shows the interplay of relaxation and charge transfer from the final state to the excited state. Larger electron transfer probabilities and longer lasting charge separation occur when oscillator strength into the intermediate state decreases, or when it increases into the final state, and when temperature increases. Longer lasting charge separation also occurs when the non-adiabatic momentum coupling decreases, a somewhat unexpected result which is due to the combined effect of population relaxation and transitions among many vibronic states.

Photogenerated Hot Electron Dynamics at Gaas (100) Surfaces

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Hot electron effect in GaAs/ AlGaAs multiple quantum wells

Surface-state-related carrier dynamics of GaAs determined by UV-visible pump-probe terahertz spectroscopy

Hot Carrier Photoluminescence from Strained InxGa1−xAs/GaAs Single Quantum Wells

Direct and Simultaneous Observation of Ultrafast Electron and Hole Dynamics in Germanium

Ultrafast magneto-photocurrents in GaAs: Separation of surface and bulk contributions

Exciton Relaxation and Coupling Dynamics in a GaAs/AlxGa1−xAs Quantum Well and Quantum Dot Ensemble

Ultrafast real-time tracing of surface electric field generated via hot electron transport in polar semiconductors

Quasiparticle Intepretation of Photoemission Spectra and Optical Properties of GaAs(110)

Photon emission by hot electron injection across a lateral \textit{pn} junction

Direct imaging of electron recombination and transport on a semiconductor surface by femtosecond time-resolved photoemission electron microscopy

Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure

Observation of Hot Electron Relaxation in GaAs/AlGaAs Multiple Quantum Wells by Excitation Spectroscopy

Real-Time Ab Initio Investigation on Hot Electron Relaxation Dynamics in Silicon

Ultrafast carrier relaxation dynamics of photoexcited GaAs and GaAs/AlGaAs nanowire array

Probing Semiconductor Band Structures and Heterojunction Interface Properties with Ballistic Carrier Emission: Gaas/Alxga1-Xas As A Model System

Photoinduced electron transfer at a Si(111) nanostructured surface: effect of varying light wavelength, temperature, and structural parameters

Hot electron dynamics in a semiconductor nanowire under intense THz excitation

Observation of Nonequilibrium Carrier Distribution in Ge, Si and GaAs by Terahertz-pump--Terahertz-probe Measurements

Exciton Transfer among Interface Islands in Growth-Interrupted Single Quantum Wells