Abstract:Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most conventional solid-state single-photon sources are based on single emitters such as self-assembled quantum dots, which are created at random locations and require spectral filtering. These issues hinder the integration of a single-photon source into a scaleable photonic quantum network for applications such as on-chip photonic quantum processors. In this work, using only regular lithography techniques on a conventional GaAs quantum well, we realise an electrically triggered single-photon source with a GHz repetition rate and without the need for spectral filtering. In this device, a single electron is carried in the potential minimum of a surface acoustic wave (SAW) and is transported to a region of holes to form an exciton. The exciton then decays and creates a single photon in a lifetime of ~ 100ps. This SAW-driven electroluminescence (EL) yields photon antibunching with $g^{(2)}(0) = 0.39 \pm 0.05$, which satisfies the common criterion for a single-photon source $g^{(2)}(0) < 0.5$. Furthermore, we estimate that if a photon detector receives a SAW-driven EL signal within one SAW period, this signal has a 79%-90% chance of being a single photon. This work shows that a single-photon source can be made by combining single-electron transport and a lateral n-i-p junction. This approach makes it possible to create multiple synchronised single-photon sources at chosen positions with photon energy determined by quantum-well thickness. Compared with conventional quantum-dot-based single-photon sources, this device may be more suitable for an on-chip integrated photonic quantum network.

Photon emission by hot electron injection across a lateral \textit{pn} junction

Single-photon Emission from an Acoustically-driven Lateral Light-emitting Diode

Hot electron effect in GaAs/ AlGaAs multiple quantum wells

Photonic integrated circuits fabricated using quantum well intermixing

Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure

Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters

Plasmonically-powered Hot Carrier Induced Modulation of Light Emission in a Two-Dimensional GaAs Semiconductor Quantum Well

Enhanced hot-electron injection across Au/GaN heterojunction by the piezo-phototronic effect for efficient sub-bandgap photodetection

Electrically Pumped Single-Photon Sources In Lateral P-I-N Junctions

Hot-Electron Intraband Luminescence from GaAs Nanospheres Mediated by Magnetic Dipole Resonances

ELECTRICALLY PUMPED SINGLE-PHOTON SOURCES TOWARDS 1.3 Μm

Indistinguishable photons from deterministically integrated single quantum dots in heterogeneous GaAs/Si$_3$N$_4$ quantum photonic circuits

Non-Hermitian Anharmonicity Induces Single-Photon Emission

Optoelectronic Devices on AlGaN/GaN HEMT Platform

Photoneutralization of charges in GaAs quantum dot based entangled photon emitters

Stable electroluminescence in ambipolar dopant-free lateral p-n junctions

On demand single photon generation and coherent control of excitons from resonantly driven nanowire quantum dots

Efficient demultiplexed single-photon source with a quantum dot coupled to a nanophotonic waveguide

Design of a GaInP/AlGaInP Electrically-Driven Photon-Pair Source Near 1.3-Micrometer Wavelengths

Quantum photonics hybrid integration platform

Hybrid electroluminescence device for on-demand single photon generation at room temperature