Abstract:We demonstrate a method to generate photons by injecting hot electrons into a {\it pn} junction within a \ce{GaAs/AlGaAs} heterostructure. Hot electrons are generated by biasing across a mesoscopic potential in {\it n}-type region and travel toward {\it p}-type region through quantum Hall edge channel in the presence of magnetic field perpendicular to the substrate. The {\it p}-type region is created several microns away from the hot electron emitter by inducing interfacial charges using a surface gate. The energy relaxation of the hot electrons is suppressed by separating the orbitals before and after longitudinal-optical (LO) phonon emission. This technique enables the hot electrons to reach the {\it p}-type region and to recombine with induced holes followed by photon emissions. Hot electron-induced hole recombination is confirmed by a peak around \qty{810}{nm} in an optical spectrum that corresponds to excitonic recombination in a \ce{GaAs} quantum well. An asymmetric structure observed in the optical spectrum as a function of the magnetic field originates from the chiral transport of the hot electrons in the Hall edge channel. We propose the combination of our technology and on-demand single-electron source would enable the development of an on-demand single photon source that is an essential building block to drive an optical quantum circuit and to transfer quantum information for a long distance.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop an on - demand single - photon source for use in fields such as quantum communication, computing, and imaging. Specifically, the authors proposed a method of generating photons by injecting hot electrons into a lateral pn junction and demonstrated the feasibility of this technique. ### Main problems and solutions 1. **Requirements for on - demand single - photon sources** - Ideal single - photon sources have a wide range of applications in the field of quantum optics, especially in quantum communication, computing, and imaging. These applications require that the device can emit exactly one photon when requested and emit no photons at all when not requested. - The paper points out that existing single - photon sources usually have a trade - off problem: the photon emission rate (or brightness) and single - photon purity (characterized by the minimum coincidence count \( g^{(2)}(0) \)). For example, using an optical cavity can enhance the coupling between a quantum dot and an excitation laser, but it is still difficult to completely eliminate the probability of emitting a second photon. 2. **Hot - electron injection scheme** - The authors proposed a new method to achieve on - demand single - photon emission by injecting hot electrons into a lateral pn junction. Hot electrons are generated in the n - type region by a bias voltage and are transported to the p - type region through the quantum Hall edge channel. - In the p - type region, hot electrons recombine with induced holes, thereby emitting photons. To ensure that only hot electrons can enter the p - type region, the bias voltage of the pn junction is set to be lower than the threshold voltage, so that the energy of hot electrons is sufficient to overcome the pn - junction barrier, while thermally - equilibrated electrons cannot pass through. 3. **Experimental verification** - The authors experimentally demonstrated that hot electrons can be transported to the p - type region through the quantum Hall edge channel and recombine with holes there to generate photons. The experimental results show that the photon emission spectrum has a peak near 810 nm, corresponding to the exciton recombination in the GaAs quantum well. - The experiment also observed an asymmetric spectral structure caused by the magnetic field, which is attributed to the chiral transport characteristics of hot electrons in the Hall edge channel. ### Formula representation - **Relationship between photon emission rate and single - photon purity** \[ g^{(2)}(0)=\frac{\langle n(n - 1)\rangle}{\langle n\rangle^{2}} \] where \( g^{(2)}(0) \) is the second - order correlation function, used to characterize single - photon purity; \( \langle n\rangle \) is the average photon number; \( \langle n(n - 1)\rangle \) is the probability of detecting two photons simultaneously. - **Hot - electron energy distribution** \[ N(E)\propto e^{-\frac{E - E_{\text{Fermi}}}{k_{B}T}} \] where \( N(E) \) is the energy distribution function of hot electrons; \( E_{\text{Fermi}} \) is the Fermi level; \( k_{B} \) is the Boltzmann constant; \( T \) is the temperature. ### Conclusion This paper experimentally verified that injecting hot electrons into a lateral pn junction can achieve on - demand single - photon emission and demonstrated the potential application value of this method in the field of quantum optics. This result provides new ideas and technical means for developing efficient single - photon sources.

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