Abstract:Resonance Raman spectroscopy was performed for the investigation of Bi2‐xSbxTe3‐ySey and Bi2Te3 films. At 300 K, Ag and Eg modes became broader, and the wavenumber shifted to a lower value; the intensity of the mode was dampened due to anharmonic coupling. At near resonance, the intensity of the LO mode was enhanced due to the interband electronic transition. Phonon occupation is temperature (T) dependent; it may participate in scattering with electronic states of topological insulators (TIs). Longitudinal optical (LO) phonons A1g1 and A1g2 in Bi2 − xSbxTe3 − ySey (BSTS) was resonantly excited by a photon energy (Ep) 2.33 eV due to electronic transition of unoccupied conduction band. The intensity of these modes was enhanced in Bi2Te3 film at Ep 1.87 eV, which is close to the electronic transition of unoccupied Dirac states. Fröhlich coupling strength was the main mechanism for higher intensity of A1g1 and A1g2 modes. At 300 K, the intensity of the A1g2 mode was significantly decayed in both the BSTS and Bi2Te3 at Ep 2.33 and 1.87 eV due to the anharmonic coupling. However, at similar value of T, spectral profile of A1g1 and Eg2 modes was not affected because of the lower probability of decay rate of these phonons. In resonant condition, well‐resolved Raman forbidden surface modes were observed at T of 50 K. At 300 K, more asymmetric Fano profile of surface phonon was observed due to the anharmonic coupling. The study indicated that at high T, A1g1 mode and anharmonic coupling may become primary cause for scattering with electronic states of the TIs. However, at low T, primarily, both the LO phonons participated in the scattering.

Raman Spectroscopy Of Epitaxial Topological Insulator Bi2te3 Thin Films On Gan Substrates

Vibrational Properties of Epitaxial Bi4Te3 Films As Studied by Raman Spectroscopy

In Situ Raman Spectroscopy of Topological Insulator Bi2Te3 Films with Varying Thickness

Raman Characterization and Transport Properties of Morphology-Dependent Two-Dimensional Bi2Te3 Nanofilms

Observation of Phonon Modes in Epitaxial PbTe Films Grown by Molecular Beam Epitaxy

Raman Spectroscopy of Bi2Se3-xTex (x= 0 to 3) Topological Insulator Crystals

Resonance Raman Scattering of Topological Insulators Bi2Te3 and Bi2 − xSbxTe3 − ySey Thin Films

Abnormal Raman Spectra of PbTe Crystalline Thin Films Grown by Molecular Beam Epitaxy

Polarization-resolved Raman resonant excitation of surface and bulk electronic bands and phonons in MBE grown topological insulator thin films

Molecular beam epitaxial growth of topological insulators.

Raman Spectroscopy of Few-Quintuple Layer Topological Insulator Bi2Se3 Nanoplatelets

Micro-Raman Spectroscopy of Mechanically Exfoliated Few-Quintuple Layers of Bi(2)Te(3), Bi(2)Se(3) and Sb(2)Te(3) Materials

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Investigating and Manipulating the Molecular Beam Epitaxy Growth Kinetics of Intrinsic Magnetic Topological Insulator MnBi2Te4 with in Situ Angle-Resolved Photoemission Spectroscopy

Investigating and manipulating the molecular beam epitaxy growth kinetics of intrinsic magnetic topological insulator MnBi2Te4within situangle-resolved photoemission spectroscopy.

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Molecular Beam Epitaxy of Bilayer Bi(111) Films on Topological Insulator Bi2te3: A Scanning Tunneling Microscopy Study

Epitaxial Growth and Structural Characterizations of MnBi2Te4 Thin Films in Nanoscale

Raman Spectra of PbTe- and GeTe-Based Monocrystalline Epitaxial Layers

Polarized Temperature Dependent Raman Study of Bi2Te3-Cr2Ge2Te6 heterostructure and the Ferromagnetic Insulator Cr2Ge2Te6

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si