The Effect of Ti3sic2 Doping on the Microstructure and Superconducting Properties of Mgb2

Di Shan,Guo Yan,Lian Zhou,Ping Ji,Chengshan Li,Qingyang Wang,Shengnan Zhang,Fang Yang,Guoqing Liu
DOI: https://doi.org/10.1016/j.phpro.2012.03.438
2012-01-01
Physics Procedia
Abstract:Doping of MgB2 by Ti3SiC2 and its potential for improving the flux pinning were studied for MgB2(1-x)(Ti3SiC2)x with x = 0, 0.025, 0.05, 0.075 and 0.1, respectively. These bulks were pressed at 20 - 50MPa and heated to 650 - 950°C for 1.5 - 3h. It was found that optimal samples were obtained, which were pressed at 40MPa and sintered at 850°C for 2h. The transition temperature (Tc) was measured on the optimal series samples using dc susceptibility and a reduction of Tc from 38K to 36K was observed. The critical current density (Jc) which was deduced from the hysteresis loop was found to increase at doping levels x = 0.025 - 0.075. With a higher doping level x = 0.1, Jc was suppressed lower than that in the pure one due to non-superconducting precipitates collection at the grain boundaries.
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