Abstract:A high-performance In 0.53 Ga 0.47 As n-channel MOSFET integrated with a HfAlO gate dielectric and a TaN gate electrode was fabricated using a self-aligned process. After HCl cleaning and (NH 4 ) 2 S treatment, the chemical vapor deposition HfAlO growth on In 0.53 Ga 0.47 As exhibits a high-quality interface. The fabricated nMOSFET with a HfAlO gate oxide thickness of 11.7 nm shows a gate leakage current density as low as 2.5 times 10 -7 A/cm 2 at V g of 1 V. Excellent inversion capacitance was illustrated. Silicon implantation was self-aligned to the gate, and low-temperature activation for source and drain was achieved by rapid thermal annealing at 600degC for 1 min. The source and drain junction exhibited an excellent rectifying characteristic and high forward current. The result of an In 0.53 Ga 0.47 As nMOSFET shows well-performed I d -V d and I d -V g characteristics. The record high peak electron mobility of 1560 cm 2 /Vs has been achieved without any correction methods considering interface charge and parasitic resistance.

A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process

An "Ohmic-First" Self-Terminating Gate-Recess Technique for Normally-off Al2O3/GaN MOSFET

Improved Fabrication of Fully-Recessed Normally-off SiN/SiO2/GaN MISFET Based on the Self-Terminated Gate Recess Etching Technique

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

A Study on the Optimized Ohmic Contact Process of AlGaN/GaN-Si MIS-HEMTs

Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si3N4 as the Mask

Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate

Self-Aligned Ge Nmosfets With Gate-Last Process On Geoi Platform

Inversion-Mode Self-Aligned <formula formulatype="inline"><tex Notation="TeX">$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ </tex></formula> N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate

Fabrication of Normally off Algan/Gan Mosfet Using A Self-Terminating Gate Recess Etching Technique

Normally-off Fully Recess-Gated GaN Metal–insulator–semiconductor Field-Effect Transistor Using Al2O3/Si3N4 Bilayer As Gate Dielectrics

Inversion-Mode Self-Aligned In0.53ga0.47asn-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With Hfalo Gate Dielectric And Tan Metal Gate

Fabrication and Characterization of Gate-Last Self-Aligned Aln/Gan Mishemts with in Situ Sinx Gate Dielectric

Fabrication of Self-aligned Enhancement-mode n-channel GaAs MOSFETs Employing a Wet Clean Process for GaAs Substrates

Normally-Off Gan Recessed-Gate Mosfet Fabricated By Selective Area Growth Technique

Gate-Recessed Normally-OFF GaN MOSHEMT with Improved Channel Mobility and Dynamic Performance Using AlN/Si 3 N 4 As Passivation and Post Gate-Recess Channel Protection Layers

A Study of Gan Mosfets with Atomic-Layer-Deposited Al2o3 As the Gate Dielectric

Enhancing ON- and OFF-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire With Reduced Interface Charges and a Thick Bottom Dielectric

Improved Performance of Fully-Recessed Normally-off LPCVD SiN/GaN MISFET Using N2O Plasma Pretreatment

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process