Abstract:A small bandgap and light carrier effective mass ( m 0 ) lead to obvious ambipolar transport behavior in carbon nanotube (CNT) field-effect transistors (FETs), including a high off-state current and severe degradation of the subthreshold swing (SS) with increasing drain bias voltage. We demonstrate a drain-engineered method to cope with this common problem in CNT-film FETs with a sub-µm channel length, i.e., suppressing the ambipolar behavior while maintaining high on-state performance by adopting a feedback gate (FBG) structure to extend the drain region from the CNT/metal contact to the proximate CNT channels to suppress the tunneling current. Sub-400-nm-channel-length FETs with a FBG structure statistically present a high on/off ratio of up to 10 4 and a sub-200 mV/dec SS under a high drain bias of up to −2 V while maintaining a high on-state current of 0.2 mA/µm or a peak transconductance of 0.2 mS/µm. By lowering the supply voltage to 1.5 V, FBG CNT-film FETs can meet the requirement of standard-performance ultra large scale integrated circuits (ULSICs). Therefore, the introduction of the drain engineering structure enables applications of CNT-film-based FETs in ULSICs and could also be widely extended to other small-bandgap semiconductor-based FETs for an improvement in their off-state property.

Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Comparative study on the characteristics among few-walled carbon nanotube array field-effect transistors

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Modeling And Simulation Of Carbon Nanotube-Semiconductor Heterojunction Vertical Field Effect Transistors

Nanotube and Nanowire Transistors

Predicted Performance Advantages of Carbon Nanotube Transistors with Doped Nanotubes as Source/Drain

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution

Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage.

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits

Drain-engineered Carbon-Nanotube-film Field-Effect Transistors with High Performance and Ultra-Low Current Leakage

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Carbon Nanotube Feedback-Gate Field-Effect Transistor: Suppressing Current Leakage and Increasing On/off Ratio.

Scaling carbon nanotube CMOS FETs towards quantum limit

Novel Local Silicon-Gate Carbon Nanotube Transistors Combining Silicon-on-Insulator Technology for Integration

Carbon Nanotube Electronics: Recent Advances

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

Fabrication and Properties of Double Gated Double Walled Carbon Nanotube Field Effect Transistors

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts