Deposition of ZnO Films with C-Axes Lying in R-sapphire Substrate Planes

Yan Wang,Shu-yi Zhang,Kiyotaka Wasa,Xiu-ji Shui

DOI: https://doi.org/10.1121/1.4709066

2012-01-01

The Journal of the Acoustical Society of America

Abstract:The (110) textured ZnO films with c-axes lying in R-sapphire substrate planes are deposited by RF magnetron sputtering. The focusing investigation is the effect of substrate position in the sputtering on structural and acoustic properties of the ZnO films on the sapphire. The crystallographic characteristics of the films are characterized by X-ray diffraction (XRD) analysis. It is found that the crystalline orientation of the ZnO film varies with the substrate position deflected from the center of the target. The XRD spectra of the films show that there is an optimized substrate position, at which the strongest (110) peak of the ZnO film can be obtained. However, with the decrease or further increase of the deflection, the (110) diffraction intensity decreases and additional diffraction peaks of (002), (102) and (103) emerge. In order to investigate the variations of acoustic properties of these films, the ZnO piezoelectric films are deposited on R-sapphire substrates with different deflection positions, and the bilayered structures are used to fabricate film bulk acoustic resonators (FBARs). The results show that the electromechanical coupling coefficients k15 of the shear mode acoustic waves excited by FBARs also vary with the different positions similar to that shown by the XRD spectra.