Abstract:Edge structure and stability are crucial in determining both the morphology and the growth behaviours of hexagonal boron nitride (h-BN) domains in chemical vapour deposition (CVD) growth under near thermal equilibrium conditions. In this study, various edges of h-BN on three typical transition metal surfaces used for h-BN's CVD growth, Cu(111), Ni(111) and Rh(111), are explored with density functional theory calculations. Different from that in vacuum, our study shows that the formation of non-hexagonal rings, such as pentagon, heptagon or their pairs, is energetically not preferred and both zigzag (ZZ) edges are more stable than the armchair (AC) edge on all the explored catalyst surfaces under typical conditions of h-BN's CVD growth, which explains the broad experimental observation of triangular h-BN domains. More importantly, our results indicate that, instead of the pristine ZZ edge terminated with nitrogen atoms (ZZN), the triangular BN domains observed in experiments are likely to be enclosed with ZZ Klein edges having dangling atoms, ZZB + N or ZZN + B. By applying the theory of Wulff construction, we predicted that the equilibrium shape of a BN domain could be a hexagon enclosed with nitrogen-rich AC edges, triangles enclosed with two different types of ZZ Klein edges or a hexagon enclosed with boron-rich AC edges if the growth is in a N-rich, neutral or B-rich environment, respectively. This study presents how the edges and equilibrium shapes of h-BN domains can be controlled during the CVD synthesis and provides guidelines for further exploring the growth behaviours and improving the quality of CVD-prepared h-BN films.

Vacancy Growth and Migration Dynamics in Atomically Thin Hexagonal Boron Nitride under Electron Beam Irradiation

Electron Knock-On Damage in Hexagonal Boron Nitride Monolayers

Creation of single vacancies in hBN with electron irradiation

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Fabrication of a Freestanding Boron Nitride Single Layer and Its Defect Assignments.

Atomic-Precision Fabrication of Quasi-Full-Space Grain Boundaries in Two-Dimensional Hexagonal Boron Nitride.

Exploring methods for creation of Boron-vacancies in hexagonal Boron Nitride exfoliated from bulk crystal

Defect-engineering hexagonal boron nitride using low-energy Ar+ irradiation

Electron Beam Restructuring of Quantum Emitters in Hexagonal Boron Nitride

Vacancy-Assisted Growth Mechanism of Multilayer Hexagonal Boron Nitride on a Fe2B Substrate

Atomic Resolution Imaging Of Grain Boundary Defects In Monolayer Chemical Vapor Deposition-Grown Hexagonal Boron Nitride

Probing the Out-of-plane Distortion of Single Point Defects in Atomically Thin Hexagonal Boron Nitride at the Picometer Scale.

Defect Engineering of Monoisotopic Hexagonal Boron Nitride Crystals via Neutron Transmutation Doping

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines

Geometric and electronic structures of monolayer hexagonal boron nitride with multi-vacancy

Understanding vapor phase growth of hexagonal boron nitride

Identification and thermal stability of point defects in neutron-irradiated hexagonal boron nitride (h-BN)

Transition from amorphous boron carbide to hexagonal boron carbon nitride thin films induced by nitrogen ion assistance

Thermodynamics of carbon point defects in hexagonal boron nitride

Growth and Etching of Monolayer Hexagonal Boron Nitride