Optimal Design of Reverse Blocking IGCT for Hybrid Line Commutated Converter
Chunpin Ren,Jiapeng Liu,Xiaozhao Li,Yue Song,Lihui Xu,Zongze Wang,Biao Zhao,Zhanqing Yu,Jinpeng Wu,Rong Zeng
DOI: https://doi.org/10.1109/tpel.2023.3299457
IF: 5.967
2023-01-01
IEEE Transactions on Power Electronics
Abstract:The hybrid line commutated converter topology has been verified to reduce the commutation failure probability effectively, but the reverse blocking integrated gate commutated thyristor (RB-IGCT) that meets the requirements of this topology has not yet been developed. This article focuses on the optimal design of the RB-IGCT with high blocking voltage, large on -state current, and high turn- off capability. First, an emitter isolation structure is proposed to tune the low-level injection efficiency, and the forward leakage current can be reduced by 50% without degrading the on- state current. Then, a method for optimizing anode emitter is presented. A high-doped and shallow p + emitter is preferred to control the current gain while ensuring a low on -state voltage. As to the turn- off capability, the corrugated p-base structure is used to independently improve the maximum controllable current (MCC). In addition to the corrugation amplitude, the effect of the corrugation width is verified by experiments. Finally, 8 kV RB-IGCT samples are fabricated and tested, which reach over 3 kA average on -state current and 5.5 kA MCC. This article not only provides a practical guidance to the design of the RB-IGCT, but also promotes the development of the HVdc transmission system.