Abstract:Electronic and photonic technologies have transformed our lives—from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions1,2. This goal is hindered by the fact that most silicon nanotechnologies—which enable our processors, computer memory, communications chips and image sensors—rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal–oxide–semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing3,4. By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions5, but with the performance, complexity and scalability of ‘systems on a chip’1,6–8. As transistors smaller than ten nanometres across become commercially available9, and as new nanotechnologies emerge10,11, this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

Towards scalable heterogeneous integration of thin-film lithium niobate on silicon photonics using micro-transfer printing

Reliable micro-transfer printing method for heterogeneous integration of lithium niobate and semiconductor thin films

Micro-transfer-printed Thin film lithium niobate (TFLN)-on-Silicon Ring Modulator

A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform

Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering

Heterogeneous integration of amorphous silicon carbide on thin film lithium niobate

Hybrid Integration of Thin-film Lithium Niobate and Silicon Photonics

Heterogeneous Integration of Lithium Niobate and Silicon Nitride Waveguides for Wafer-Scale Photonic Integrated Circuits on Silicon.

Toward Photonic–electronic Convergence Based on Heterogeneous Platform of Merging Lithium Niobate into Silicon

Hybrid integration of silicon photonic devices on lithium niobate for optomechanical wavelength conversion

Nonvolatile Electrically Reconfigurable Silicon Photonics Enabled by Back-End-of-line Integration of Phase Change Materials

Silicon Photonic Network-on-chip and Enabling Components

Silicon Photonics Integration for Future Generation Optical Network.

Ultrafast tunable lasers using lithium niobate integrated photonics

Integrated resonant electro-optic comb enabled by platform-agnostic laser integration

Monolithic back-end-of-line integration of phase change materials into foundry-manufactured silicon photonics

Monolithically integrated active passive waveguide array fabricated on thin film lithium niobate using a single continuous photolithography process

Wavelength-accurate and wafer-scale process for nonlinear frequency mixers in thin-film lithium niobate

Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip

Photonic integration of lithium niobate micro-ring resonators onto silicon nitride waveguide chips by transfer-printing

Integrated Photonics on the Dielectrically Loaded Lithium Niobate on Insulator Platform