Photonic integration of lithium niobate micro-ring resonators onto silicon nitride waveguide chips by transfer-printing

Zhibo Li,Jack A. Smith,Mark Scullion,Nils Kolja Wessling,Loyd J. McKnight,Martin D. Dawson,Michael J. Strain
DOI: https://doi.org/10.1364/OME.474200
2022-09-08
Abstract:The heterogeneous integration of lithium niobate photonic waveguide devices onto a silicon nitride waveguide platform via a transfer-printing approach has been demonstrated for the first time. A fabrication process was developed to make free-standing lithium niobate membrane devices compatible with back-end integration onto photonic integrated circuits. Micro-ring resonators in membrane format were lithographically defined by using laser direct writing and plasma dry etching. The lithium niobate micro-ring resonators were then transferred from their host substrate and released onto a silicon nitride waveguide chip. An all-pass ring resonator transmission spectrum was obtained in the 1.5 {\mu}m to 1.6 {\mu}m wavelength range, with a measured loaded Q-factor larger than 32000.
Optics
What problem does this paper attempt to address?
The key problem that this paper attempts to solve is how to integrate lithium niobate (LN) microring resonators onto silicon nitride (SiN) waveguide chips through transfer printing technology, thereby achieving heterogeneously integrated photonic integrated circuits (PICs). Specifically, the research objectives include: 1. **Developing a compatible manufacturing process**: In order to enable lithium niobate film devices to be integrated with the existing back - end of photonic integrated circuits, the researchers developed a process for manufacturing free - standing lithium niobate film devices. This includes using laser direct writing and plasma dry etching to define microring resonators and ensuring that these devices can be successfully transferred onto SiN waveguide chips. 2. **Achieving efficient transfer and integration**: Through transfer printing technology, pre - fabricated lithium niobate microring resonators are released from their original substrates and transferred onto SiN waveguide chips. This process needs to ensure high - precision alignment and reliable adhesion to guarantee the functionality and performance of the devices. 3. **Verifying optical performance**: The researchers tested the transmission characteristics of the integrated microring resonators in the wavelength range from 1.5 μm to 1.6 μm and measured their loaded Q - factor. The results show that the Q - factor is greater than 3.2×10⁴. This proves the effectiveness of this method and the good optical performance of lithium niobate on the SiN platform. 4. **Exploring hybrid material design and mode confinement**: In order to optimize device performance, the researchers also explored how to maximize the overlap of the optical mode field with the lithium niobate material (ΓLN) while minimizing the waveguide bending loss. By simulating the bending losses and mode overlaps of different designs, they found the optimal design solution. In summary, the main purpose of this paper is to demonstrate a new and effective heterogeneously integrated method, enabling high - performance lithium niobate photonic devices to be realized on the non - native SiN waveguide platform, thus providing new possibilities for future complex photonic integrated circuits.