Abstract:Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by epitaxial strain. However, despite the rich nature of strain effects on oxide materials properties, such as ferroelectricity, magnetism, and superconductivity, the relationship between the strain and electrical properties of the 2DEG at the LaAlO3/SrTiO3 heterointerface remains largely unexplored. Here, we use different lattice constant single crystal substrates to produce LaAlO3/SrTiO3 interfaces with controlled levels of biaxial epitaxial strain. We have found that tensile strained SrTiO3 destroys the conducting 2DEG, while compressively strained SrTiO3 retains the 2DEG, but with a carrier concentration reduced in comparison to the unstrained LaAlO3/SrTiO3 interface. We have also found that the critical LaAlO3 overlayer thickness for 2DEG formation increases with SrTiO3 compressive strain. Our first-principles calculations suggest that a strain-induced electric polarization in the SrTiO3 layer is responsible for this behavior. It is directed away from the interface and hence creates a negative polarization charge opposing that of the polar LaAlO3 layer. This both increases the critical thickness of the LaAlO3 layer, and reduces carrier concentration above the critical thickness, in agreement with our experimental results. Our findings suggest that epitaxial strain can be used to tailor 2DEGs properties of the LaAlO3/SrTiO3 heterointerface.

Correction to Creation of High Mobility Two-Dimensional Electron Gases Via Strain Induced Polarization at an Otherwise Nonpolar Complex Oxide Interface.

Room Temperature Formation of High‐Mobility Two‐Dimensional Electron Gases at Crystalline Complex Oxide Interfaces

High-Mobility Two-Dimensional Electron Gases at Oxide Interfaces: Origins and Opportunities

A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

High valley-degeneracy electron gas at double perovskite - strontium titanate interface

Enabling 2D Electron Gas with High Room-Temperature Electron Mobility Exceeding 100 cm2 Vs-1 at a Perovskite Oxide Interface

A two-dimensional electron gas based on a 5<i>s</i> oxide with high room-temperature mobility and strain sensitivity

A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity

Enabling two-dimensional electron gas with high room-temperature electron mobility exceeding 100 cm$^2$/Vs at a perovskite oxide interface

Anisotropic two-dimensional electron gas at SrTiO3(110) protected by its native overlayer

Two-Dimensional Electron Gas with High Mobility Forming at BaO/SrTiO3 Interface

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain

High-mobility spin-polarized quasi-two-dimensional electron gas and large low-field magnetoresistance at the interface of EuTiO3/SrTiO3 (110) heterostructures

High-Mobility Spin-Polarized Two-Dimensional Electron Gases at EuO/KTaO_{3} Interfaces.

Mobility Modulation and Suppression of Defect Formation in Two-Dimensional Electron Systems by Charge-Transfer Management

High-mobility two-dimensional electron gas in $γ$-Al$_2$O$_3$/SrTiO$_3$ heterostructures

Two-Dimensional Electron Gas in Zn-Polar Znmgo/Zno Heterostructure Grown by Metal-Organic Vapor Phase Epitaxy

Giant Tunability of the Two-Dimensional Electron Gas at the Interface of Γ-Al2o3/srtio3

Tuning the two-dimensional electron liquid at oxide interfaces by buffer-layer-engineered redox reactions

Reconstruction of Electrostatic Field at the Interface Leads to Formation of Two-Dimensional Electron Gas at Multivalent (110) Laalo3/Srtio3 Interfaces