Abstract:Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as tunneling transistors, light emitting devices and photodetectors, and as photovoltaic cells . Although complex vertical heterostructures were fabricated via van der Waals stacking of different 2D materials, atomically sharp multi-junctions in lateral heterostructures is a quite challenging task, but a viable route towards the development of commercial applications. Previously reported approaches to obtain single-junction lateral heterostructures of the type MoX2-WX2 (X= S and/or Se), involve either a single-step or a two-step growth process. However, these methods lack the flexibility to control the lateral width of the TMD domain as well as its composition. Here, we report a simple and yet scalable synthesis approach for the fabrication of lateral multi-junction heterostructures based on the combination of different TMD monolayers [MoX2-WX2 (X2 = S2, Se2 or SSe)]. Atomically sharp lateral junctions are sequentially synthesized from solid precursors by changing only the reactive gas environment in the presence of water vapor. This allows to selectively control the water-induced oxidation, volatilization and hence the relative amount of a specific metal oxide vapor, leading to the selective edge-epitaxial growth of either MoX2 or WX2. Spatially dependent photoluminescence and atomic-resolution images confirm the high crystallinity of the monolayers and the seamless lateral connectivity between the different TMD domains. These findings could be extended to other families of 2D materials, and creates the foundation towards the development of complex and atomically thin in-plane super-lattices, devices and integrated circuits.

Nanoscale Integration of Two-Dimensional Materials by Lateral Heteroepitaxy.

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

Heterostructures produced from nanosheet-based inks

Construction of 2D Lateral Pseudoheterostructures by Strain Engineering

In situ epitaxial engineering of graphene and h-BN lateral heterostructure with a tunable morphology comprising h-BN domains

Lateral epitaxial growth of two-dimensional heterostructure linked by gold adatoms

One-Pot Confined Epitaxial Growth of 2D Heterostructure Arrays

Atomically sharp 1D interfaces in 2D lateral heterostructures of VSe$_2$-NbSe$_2$ monolayers

Epitaxial Nanosheet-Nanowire Heterostructures

Selective-area van der Waals epitaxy of h-BN/graphene heterostructures via He$^{+}$ irradiation-induced defect-engineering in 2D substrates

Sequential Edge-Epitaxy in 2D Lateral Heterostructures

Heteroepitaxy of Semiconducting 2H-Mote2 Thin Films on Arbitrary Surfaces for Large-Scale Heterogeneous Integration

Creation of a two-dimensional polymer and graphene heterostructure

Lateral heterostructures of two-dimensional materials by electron-beam induced stitching

Aligned Stacking of Nanopatterned 2D Materials for High-Resolution 3D Device Fabrication

Epitaxial Growth of Two-Dimensional Magnetic Lateral and Vertical Heterostructures

Novel heterostructures by layering 2D materials

Understanding epitaxial growth of two-dimensional materials and their homostructures.

Heterostructures and Superlattices in One-Dimensional Nanoscale Semiconductors

Multi-stage anisotropic etching of two-dimensional heterostructures

From two-dimensional materials to heterostructures