Abstract:The interfacial tunable band alignment of heterostructures is coveted in device design and optimization of device performance. As an intentional approach, alloying allows band engineering and continuous band‐edge tunability for low‐dimensional semiconductors. Thus, combining the tunability of alloying with the band structure of a heterostructure is highly desirable for the improvement of device characteristics. In this work, the single‐step growth of alloy‐to‐alloy (MoS2(1‐x)Se2x/SnS2(1‐y)Se2y) 2D vertical heterostructures is demonstrated. Electron diffraction reveals the well‐aligned heteroepitaxial relationship for the heterostructure, and a near‐atomically sharp and defect‐free boundary along the interface is observed. The nearly intrinsic van der Waals (vdW) interface enables measurement of the intrinsic behaviors of the heterostructures. The optimized type‐II band alignment for the MoS2(1‐x)Se2x/SnS2(1‐y)Se2y heterostructure, along with the large band offset and effective charge transfer, is confirmed through quenched PL spectroscopy combined with density functional theory calculations. Devices based on completely stacked heterostructures show one or two orders enhanced electron mobility and rectification ratio than those of the constituent materials. The realization of device‐quality alloy‐to‐alloy heterostructures provides a new material platform for precisely tuning band alignment and optimizing device applications.

Growth of Alloy MoS(2x)Se2(1-x) Nanosheets with Fully Tunable Chemical Compositions and Optical Properties.

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Semiconductors: Growth of Large‐Area 2D MoS2(1‐x)Se2x Semiconductor Alloys (adv. Mater. 17/2014)

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Preparation of Single-Layer MoS(2x)Se2(1-x) and Mo(x)W(1-x)S2 Nanosheets with High-Concentration Metallic 1T Phase.

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Fabrication and Optical Performance of Mo1-xWxS2 Monolayer with Different Composition Ranges Via One-Step Chemical Vapor Deposition Approach

Growth of MoS(2(1-x))Se(2x) (x = 0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition.

Synthesis of 2D MoS2(1- x)Se2 x semiconductor alloy by chemical vapor deposition

Composition-Tunable Transition Metal Dichalcogenide Nanosheets via a Scalable, Solution-Processable Method

Synthesis of component-controllable monolayer MoxW(1- x)S2 ySe2(1- y) alloys with continuously tunable band gap and carrier type

Two-Dimensional MoxW1-xS2 Graded Alloys: Growth and Optical Properties

Direct Synthesis and Enhanced Rectification of Alloy‐to‐Alloy 2D Type‐II MoS 2(1‐ x ) Se 2 x /SnS 2(1‐ y ) Se 2 y Heterostructures

CVD Synthesis of Mo((1-x))W(x)S2 and MoS(2(1-x))Se(2x) Alloy Monolayers Aimed at Tuning the Bandgap of Molybdenum Disulfide.

Broadband tunable resonance modes from multi-composition monolayer MoS2(1− x )Se2 x with SiO2 microsphere cavity

Tunable Band Gap Photoluminescence from Atomically Thin Transition-Metal Dichalcogenide Alloys.

Colloidal 2D Mo1- xWxS2 nanosheets: an atomic- to ensemble-level spectroscopic study

Controllable phase modulation and electronic structures of monolayer MoSe2xTe2(1−x) alloys grown via molecular beam epitaxy

Ternary MoSe2xTe2-2x Alloy with Tunable Band Gap for Electronic and Optoelectronic Transistors.

Inhomogeneous Composition Distribution in Monolayer Transition Metal Dichalcogenide Alloys

Edge Epitaxy of Two-Dimensional MoSe2 and MoS2 Nanosheets on One-Dimensional Nanowires.