Abstract:Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally.

Angular dependence of the magnetoresistance effect in a silicon based p-n junction device.

A Large Magnetoresistance Effect in P–n Junction Devices by the Space‐Charge Effect

Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions

Large Magnetoresistance in Silicon at Room Temperature Induced by Onsite Coulomb Interaction

Room-Temperature Nonsaturating Magnetoresistance Of Intrinsic Bulk Silicon In High Pulsed Magnetic Fields

Large Magnetoresistance Effect in Nitrogen-Doped Silicon

Resistance Transition Assisted Geometry Enhanced Magnetoresistance in Semiconductors

Numerical Simulation of the Magnetoresistance Effect Controlled by Electric Field in P-N Junction

Light-Induced-Magnetoresistance in P-N Junction Device

Rotation of Ferromagnetic Clusters Induced Magnetoresistance in the Junction Composed of La0.9ca0.1mno3+Delta and 1 Wt.% Nb-Doped Srtio3

Transport Properties of High-Performance All-Heusler Co2CrSi/Cu2CrAl/Co2CrSi Giant Magnetoresistance Device

Diode and Inhomogeneity Assisted Extremely Large Magnetoresistance in Silicon

Magnetic Field Effects On The Manganite Junction With Different Electronic Processes

Large Magnetocapacitance in P-N Junction

Giant magnetoresistance in silicon _ _ _ Diode-assisted geometrical enhancement of magnetoresistance

Model for Large Magnetoresistance Effect in P–n Junctions

Hybrid Magnetoresistance In The Proximity Of A Ferromagnet

Enhanced Low Field Magnetoresistance in Germanium and Silicon-Diode Combined Device at Room Temperature

Magnetoresistance Effect Realized in Current-in-plane Van Der Waals Spin Valve Structure by Electrically Switchable Magnetization

Remarkable room-temperature magnetoresistance in silicon strip devices

Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect