Abstract:Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally.

Hybrid Magnetoresistance In The Proximity Of A Ferromagnet

Magnetoresistance in Metallic Ferroelectrics

Physical Origins Of The New Magnetoresistance In Pt/Yig

Rotation of Ferromagnetic Clusters Induced Magnetoresistance in the Junction Composed of La0.9ca0.1mno3+Delta and 1 Wt.% Nb-Doped Srtio3

Magnetic Scattering and Spin-Orbit Coupling Induced Magnetoresistance in Nonmagnetic Heavy Metal and Magnetic Insulator Bilayer Systems

Electric-Field Control of Magnetoresistance Behavior in a Conetic Alloy Thin Film/Pb(Mg <sub>1/3</sub>nb <sub>2/3</sub>) <sub>0.7</sub>ti <sub>0.3</sub>o <sub>3</sub> Multiferroic Heterostructure

Positive Giant Magnetoresistance in A Fe3o4/Srtio3/La0.7sr0.3mno3 Heterostructure

Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction

Observation of the Orbital Rashba-Edelstein Magnetoresistance

Resistance Transition Assisted Geometry Enhanced Magnetoresistance in Semiconductors

Tunable Magnetoresistance Devices Based On Multiferroic Heterostructures

Magnetotransport induced by anomalous Hall effect

Angular-dependent Magnetoresistance Modulated by Interfacial Magnetic State in Pt/LSMO Heterostructures

Unidirectional Magnetoresistance in Magnetic Thin Films with Non-Uniform Thickness

Novel Magnetic Field Modulation Concept Using Multiferroic Heterostructure for Magnetoresistive Sensors.

Twin-Variant Reorientation-Induced Large Magnetoresistance Effect in Ni50mn29ga21 Single Crystal

Using magnetoelectric effect to reveal magnetization behavior of bulk and heavy ferromagnetic materials

Electric-Field Control of Magnetoresistance Behavior in a Conetic Alloy Thin Film/Pb(Mg1/3Nb2/3)0.7Ti0.3O 3 Multiferroic Heterostructure

Proximity-induced anisotropic magnetoresistance in magnetized topological insulators

The Discovery of Giant Positive Magnetoresistance in Proximity to Helimagnetic Order in Manganese Phosphide Nanostructured Films

Current-dependent Positive Magnetoresistance in La0.8Ba0.2MnO3 Ultrathin Films*