Twin-Variant Reorientation-Induced Large Magnetoresistance Effect in Ni50mn29ga21 Single Crystal

Min Zeng,Siu Wing Or,Zhiyong Zhu,S. L. Ho
DOI: https://doi.org/10.1063/1.3480794
IF: 2.877
2010-01-01
Journal of Applied Physics
Abstract:We report a significant magnetoresistance (MR) effect arisen from magnetic field-induced reorientation of martensitic twin variants in a ferromagnetic shape memory Ni50Mn29Ga21 single crystal. The measured electrical resistivity shows large anisotropy and the measured MR value is as large as 25% over the wide temperature range of 230-315 K at a moderate magnetic field of 1.2 T. It is found that a proper combination of the initial state of martensitic twin variants and the direction and magnitude of applied magnetic field can give rise to either positive or negative MR value of ∼25%, thus allowing a periodic modulation of the MR effect in response to varying the spatial angle between the directions of applied magnetic field and electric current for every 180°.
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