Abstract:We present an atomistic-continuum model to simulate ultrashort-pulse laser melting processes in semiconductor solids on the example of silicon. The kinetics of transient nonequilibrium phase transition mechanisms is addressed with a molecular dynamics method at atomic level, whereas the laser light absorption, strong generated electron-phonon nonequilibrium, fast diffusion of and heat conduction due to photoexcited free carriers are accounted for in the continuum. We give a detailed description of the model, which is then applied to study the mechanism of short laser pulse melting of freestanding Si films. The effect of laser-induced pressure and temperature of the lattice on the melting kinetics is investigated. Two competing melting mechanisms, heterogeneous and homogeneous, were identified. Apart from the classical heterogeneous melting mechanism, the nucleation of the liquid phase homogeneously inside the material significantly contributes to the melting process. The simulations showed, that due to the open diamond structure of the crystal, the laser-generated internal compressive stresses reduce the crystal stability against the homogeneous melting. Consequently, the latter can take a massive character within several picoseconds upon the laser heating. Due to the negative volume of melting of modeled Si material, −7.5%, the material contracts upon the phase transition, relaxes the compressive stresses, and the subsequent melting proceeds heterogeneously until the excess of thermal energy is consumed. The threshold fluence value, at which homogeneous nucleation of liquid starts contributing to the classical heterogeneous propagation of the solid-liquid interface, is found from the series of simulations at different laser input fluences. For the example of Si, the laser melting kinetics of semiconductors was found to be noticeably different from that of metals with a fcc crystal structure.

Superheating and Induced Melting at Semiconductor Interfaces.

Effect of Temperature on the Emission Properties of Quasi 2D Glass-Like Carbon Placed on Silicon and Silicon Dioxide Substrates

Numerical Simulations of Germanium Nanofilm under Femtosecond Pulse Laser Heating

Thermal Transport in Crystalline Si/Ge Nano-Composites: Atomistic Simulations and Microscopic Models

Structural, Dynamic, and Vibrational Properties during Heat Transfer in Si/Ge Superlattices: A Car-Parrinello Molecular Dynamics Study

Picosecond Laser Melting and Evaporation of GaAs Surfaces

Superheating of Monolayer Ice in Graphene Nanocapillaries.

Field-effect induced superconductivity in surfaces of tetrahedrally coordinated semiconductors: the case of (111) hydrogenated silicon

Modelling (001) surfaces of II-VI semiconductors

Manipulation of Dangling Bonds of Interfacial States Coupled in GeTe-rich GeTe/Sb2Te3 Superlattices

Thermodynamic Stability Limit of the Crystalline State from the Gibbs Perspective

On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation

Interfacial reaction boosts thermal conductance of room-temperature integrated semiconductor interfaces stable up to 1100 C

Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

The Coupling Effect and Phase Transition Behavior of Multiple Interfaces in GeTe/Sb Superlattice-Like Films

Atomistic-continuum modeling of short laser pulse melting of Si targets

Superconductivity in hyperdoped Ge by molecular beam epitaxy

Atomic-Scale Surface Engineering for Giant Thermal Transport Enhancement Across 2D/3D van der Waals Interfaces

Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures

Molecular Dynamics Computation of Thermal Properties in Si/Ge Nanocomposites

Thermal Transport Across Metal Silicide-Silicon Interfaces: First-Principles Calculations and Green's Function Transport Simulations