Abstract:In this work, we use a combination of first-principles calculations under the density functional theory framework and heat transport simulations using the atomistic Green's function (AGF) method to quantitatively predict the contribution of the different scattering mechanisms to the thermal interface conductance of epitaxial CoSi$_2$-Si interfaces. An important development in the present work is the direct computation of interfacial bonding from density functional perturbation theory (DFPT) and hence the avoidance of commonly used `mixing rules' to obtain the cross-interface force constants from bulk material force constants. Another important algorithmic development is the integration of the recursive Green's function (RGF) method with Büttiker probe scattering that enables computationally efficient simulations of inelastic phonon scattering and its contribution to the thermal interface conductance. First-principles calculations of electron-phonon coupling reveal that cross-interface energy transfer between metal electrons and atomic vibrations in the semiconductor is mediated by delocalized acoustic phonon modes that extend on both sides of the interface, and phonon modes that are localized inside the semiconductor region of the interface exhibit negligible coupling with electrons in the metal. We also provide a direct comparison between simulation predictions and experimental measurements of thermal interface conductance of epitaxial CoSi$_2$-Si interfaces using the time-domain thermoreflectance technique. Importantly, the experimental results, performed across a wide temperature range, only agree well with predictions that include all transport processes: elastic and inelastic phonon scattering, electron-phonon coupling in the metal, and electron-phonon coupling across the interface.

What problem does this paper attempt to address?

This paper attempts to solve the problem of heat transfer at the metal - semiconductor interface, especially the cobalt silicide - silicon interface. Specifically, the author aims to quantitatively predict the contributions of different scattering mechanisms to the interfacial thermal conductivity by combining first - principles calculations and Green's function transport simulations. The following are the main problems and objectives of this study: 1. **Understanding the relative contributions of different transport mechanisms**: - The author hopes to clarify the specific contributions of different transport mechanisms such as elastic phonon scattering, inelastic phonon scattering, and electron - phonon coupling to the interfacial thermal conductivity. The relative contributions of these mechanisms are not clear in the current literature. 2. **Developing new computational methods**: - **Direct calculation of interface bonding**: Through density functional perturbation theory (DFPT), the author avoids the commonly used "mixing rules" and thus obtains the interfacial force constants more accurately. - **Improving the recursive Green's function algorithm**: In order to efficiently simulate inelastic phonon scattering and its impact on the interfacial thermal conductivity, the author combines the recursive Green's function (RGF) method with Büttiker probe scattering. 3. **Verifying the consistency between the model and experimental results**: - The author measured the thermal conductivity of the CoSi₂ - Si interface by time - domain thermoreflectance (TDTR) technology and compared it with the simulation predictions. The study shows that the simulation results can only match the experimental data well when all transport processes (including elastic scattering, inelastic scattering, and electron - phonon coupling) are considered. 4. **Revealing the microscopic mechanisms**: - By analyzing the cumulative function of heat flow across the interface, the author provides insights into the microscopic mechanisms of how anharmonic phonon scattering increases the interfacial thermal conductivity. - First - principles calculations show that delocalized acoustic phonon modes mediate the energy transfer between metal electrons and the semiconductor lattice, while the phonon modes localized within the semiconductor region have negligible coupling with metal electrons. In summary, the goal of this paper is to deeply understand and quantify various mechanisms in heat transfer at the metal - semiconductor interface by developing and applying advanced computational methods, thereby providing theoretical support for the design of high - performance electronic devices.

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