Abstract:Phonon transmission across interfaces of dissimilar materials has been studied intensively in the recent years by using atomistic simulation tools owing to its importance in determining the effective thermal conductivity of nanostructured materials. Atomistic Green's function (AGF) method with interatomic force constants from the first-principles (FP) calculations has evolved to be a promising approach to study phonon transmission in many not well-studied material systems. However, the direct FP calculation for interatomic force constants becomes infeasible when the system involves atomic disorder. Mass approximation is usually used, but its validity has not been tested. In this paper, we employ the higher-order force constant model to extract harmonic force constants from the FP calculations, which originates from the virtual crystal approximation but considers the local force-field difference. As a feasibility demonstration of the proposed method that integrates higher-order force constant model from the FP calculations with the AGF, we study the phonon transmission in the Mg2Si/Mg2Si1-xSnx systems. When integrated with the AGF, the widely-used mass approximation is found to overpredict phonon transmission across Mg2Si/Mg2Sn interface. The difference can be attributed to the absence of local strain field-induced scattering in the mass approximation, which makes the high-frequency phonons less scattered. The frequency-dependent phonon transmission across an interface between a crystal and an alloy, which often appears in high efficiency "nanoparticle in alloy" thermoelectric materials, is studied. The interfacial thermal resistance across Mg2Si/Mg2Si1-xSnx interface is found to be weakly dependent on the composition of Sn when the composition x is less than 40%, but increases rapidly when it is larger than 40% due to the transition of high-frequency phonon DOS in Mg2Si1-xSnx alloys.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to improve the understanding of phonon transport properties at the interfaces of different materials, especially in systems containing atomic disorder. Specifically, the article focuses on the phonon transport properties at the Mg₂Si/Mg₂Si₁₋ₓSnₓ interface. The following are the specific problems that the paper attempts to solve: 1. **Limitations of traditional methods**: - Directly calculating the inter - atomic force constants based on the first - principles becomes infeasible in systems involving atomic disorder. - The mass approximation (MA) is usually used, but its validity has not been verified. 2. **Introduction of the high - order force constant model (HOFCM)**: - To overcome the limitations of direct first - principles calculations and the mass approximation, the authors propose a high - order force constant model that combines the virtual crystal approximation and takes into account the differences in local force fields. - Extract harmonic force constants through HOFCM to more accurately describe the atomic interactions at the interface. 3. **Study of phonon transport in the Mg₂Si/Mg₂Si₁₋ₓSnₓ system**: - Use the proposed HOFCM combined with the atomic Green's function (AGF) method to study the frequency - dependent phonon transport in the Mg₂Si/Mg₂Si₁₋ₓSnₓ system. - Explore the influence of Sn composition on the interfacial thermal conductivity, especially the different behaviors when x is less than 40% and greater than 40%. 4. **Reveal the problems of the mass approximation**: - It is found that the mass approximation will overestimate the transport performance when calculating the phonon transport at the Mg₂Si/Mg₂Sn interface, which is due to the scattering effect caused by ignoring the local strain field. 5. **Provide design guidance**: - By studying the phonon transport properties at the interface, provide a theoretical basis for designing new nanostructured materials with adjustable thermal conductivity. In summary, this paper aims to more accurately study the phonon transport properties at the interfaces of different materials by proposing and validating a new calculation method (HOFCM), and to reveal the deficiencies of existing methods (such as the mass approximation), thereby providing guidance for the design of high - performance thermoelectric materials.

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