Abstract:Wide-bandgap (WBG) semiconductors have promising applications in power electronics due to their high voltages, radio frequencies, and tolerant temperatures. Among all the WBG semiconductors, SiC has attracted attention because of its high mobility, high thermal stability, and high thermal conductivity. However, the interfaces between SiC and the corresponding substrate largely affect the performance of SiC-based electronics. It is therefore necessary to understand and design the interfacial thermal transport across the SiC/substrate interfaces, which is critical for the thermal management design of these SiC-based power electronics. This work systematically investigates heat transfer across the 3C-SiC/Si, 4H-SiC/Si, and 6H-SiC/Si interfaces using non-equilibrium molecular dynamics simulations and diffuse mismatch model. We find that the room temperature ITC for 3C-SiC/Si, 4H-SiC/Si, and 6H-SiC/Si interfaces is 932 MW/m2K, 759 MW/m2K, and 697 MW/m2K, respectively. We also show the contribution of the ITC resulting from elastic scatterings at room temperature is 80% for 3C-SiC/Si interfaces, 85% for 4H-SiC/Si interfaces, and 82% for 6H-SiC/Si interfaces, respectively. We further find the ITC contributed by the elastic scattering decreases with the temperature but remains at a high ratio of 67%~78% even at an ultrahigh temperature of 1000 K. The reason for such a high elastic ITC is the large overlap between the vibrational density of states of Si and SiC at low frequencies (< ~ 18 THz), which is also demonstrated by the diffuse mismatch mode. It is interesting to find that the inelastic ITC resulting from the phonons with frequencies higher than the cutoff frequency of Si (i.e., ~18 THz) can be negligible. That may be because of the wide frequency gap between Si and SiC, which makes the inelastic scattering among these phonons challenging to meet the energy and momentum conservation rules.

Electron-Phonon Coupling and Thermal Conductance at a Metal-Semiconductor Interface: First-principles Analysis

Thermal Transport Across Metal Silicide-Silicon Interfaces: First-Principles Calculations and Green's Function Transport Simulations

A comparative study of interfacial thermal conductance between metal and semiconductor

Detailed consideration of the electron-phonon thermal conductance at metal-dielectric interfaces

Thermal Boundary Conductance Across Metal-Nonmetal Interfaces: Effects of Electron-Phonon Coupling both in Metal and at Interface

Role of the electron-phonon coupling in tuning the thermal boundary conductance at metal-dielectric interfaces by inserting ultrathin metal interlayers

Inelastic Phonon Transport Across Atomically Sharp Metal/semiconductor Interfaces

Mechanisms of nonequilibrium electron-phonon coupling and thermal conductance at interfaces

Thermal Interface Conductance between Aluminum and Silicon by Molecular Dynamics Simulations

Theoretical Analysis of Thermal Boundary Conductance of MoS2-SiO2 and WS2-SiO2 Interface

Importance of Electron-Phonon Coupling in Thermal Transport in Metal/semiconductor Multilayer Films

Differentiating contribution of electron–phonon coupling to the thermal boundary conductance of metal–metal–dielectric systems

Thermal transport across metal-insulator interface via electron-phonon interaction

Thermal conductivity of intrinsic semiconductor at elevated temperature: role of four-phonon scattering and electronic heat conduction

Role of Elastic Phonon Couplings in Dictating the Thermal Transport across Atomically Sharp SiC/Si Interfaces

Thermal Transport Across Metal Silicide-Silicon Interfaces: An Experimental Comparison between Epitaxial and Non-epitaxial Interfaces

Unraveling the Mechanisms of Thermal Boundary Conductance at the Graphene-Silicon Interface: Insights from Ballistic, Diffusive, and Localized Phonon Transport Regimes

The Role of Interfacial Electronic Properties on Phonon Transport in Two-Dimensional MoS2 on Metal Substrates.

A comprehensive first-principles analysis of phonon thermal conductivity and electron-phonon coupling in different metals

First-principles calculation of thermal transport in metal/graphene systems