Abstract:Cubic Cs2SnI6 perovskite is considered to be an ideal lead-free and air-stable alternative to traditional APbX(3) [A = Cs, K, CH3NH3, CH(NH2)(2)] perovskites for optoelectronic applications, such as solar cells and photodetectors. Herein, both experiments and theoretical calculations are carried out to study the lattice dynamics and temperature dependences of band gaps. Using Raman spectroscopy, we show that the obtained Cs2SnI6 film maintains a long-range crystalline structure of the cubic phase within 77-300 K, which is further confirmed via lattice dynamics calculations based on density functional theory (DFT). An ultrasmall net blueshift of 0.035 eV deduced from its temperature-dependent photoluminescence (PL) spectrum is observed as the temperature increases from 103 to 300 K, making it an ideal material for optoelectronic devices. Notably, this blueshift of the Cs2SnI6 film is significantly smaller than that of the DFT-calculated band-gap shift (similar to 0.085 eV) based on thermal expansion theory. This deviation is attributed to the strong phonon-electron (ph-e) interaction inherently occurring in Cs2SnI6 material, which counterbalances the thermal expansion effects. We further evaluate the magnitude of the ph-e interaction by fitting the full width at half maximum (FWHM) of the PL spectrum. The fitted Huang-Rhys factor (S) of 4.9 is consistent with reduced electronic dimensionality and increased vibrational degree of freedom, indicating stronger ph-e coupling strength in the Cs2SnI6 film compared with regular APbX(3)-type perovskites (S < 3.3). Adopting both thermal expansion and ph-e coupling effects, the ultrasmall band-gap shift is theoretically calculated and is in good agreement with the experimental blueshift of the band gap. In summary, our work illustrates the solid structural stability of Cs2SnI6 in both lattice and electronic structures, paving the way for the next generation of optoelectronic devices.

The Absorption Spectra of Crystal Thin Film Cs3Cu2I5

Excitonic feature in CsAg 2 I 3 crystals prepared by Bridgman method

Phase Transition and Temperature Dependence of the A(1) Low-Frequency Exciton Band Parameters in Quaternary Compound Rb-0.5cs0.5ag4i5 Thin Films

Photophysics in Cs3Cu2I5 and CsCu2I3

Absorption Spectra and Ionic Conductivity of Rbxcs1-Xag4i5 Superionic Conductors Thin Films

Temperature-dependent luminescence in pure and In+-Activated Cs3Cu2I5 single crystals

X-ray-absorption Studies of Electron Doping and Band Shifts Inr2−x…

Ultrasmall Blueshift of Near-Infrared Fluorescence in Phase-Stable Cs2SnI6 Thin Films

Study the optical properties of Cs3CeI6: First-principles calculations

Temperature-dependent Near-Infrared Emission of Highly Concentrated Cu2+in CaCuSi4O10phosphor

Excitonic Spectra Of Ternary Compounds On The Basis Of Agi

Ternary compounds (MeI-AgI) thin film growth and their excitonic spectroscopy studies

Spectroscopy of the frustrated quantum antiferromagnet Cs$_2$CuCl$_4$

Corrigendum to “Length-Scale-dependent Deformation Behavior of Fcc/hcp Cu/Ru Multilayer Thin Films” [mater. Sci. Eng. A 664 (2016) 206–214]

Excitonic emission and phonon anharmonicity in Cs3Sb2Br9

Self‐Trapped and Free Exciton Dynamics in Vacuum‐Deposited Cesium Copper Iodide Thin Films

Scintillation Properties of Cs3Cu2I5:<…

Cryogenic Scintillation Properties of Lead-Free Cs 3 Cu 2 I 5 Single Crystals

The Electronic Absorption Spectra of Binuclear Complexes,[Cu(o-phen) (sal)no3 and [cu2 (sacch)4(im)4] Crystal

Temperature-dependent Band Gap, Interband Transitions, and Exciton Formation in Transparentp-Type Delafossitecucr1−xmg…

Temperature Dependence of Phonon Modes, Dielectric Functions, and Interband Electronic Transitions in Cu2ZnSnS4 Semiconductor Films