Phase Transition and Temperature Dependence of the A(1) Low-Frequency Exciton Band Parameters in Quaternary Compound Rb-0.5cs0.5ag4i5 Thin Films

JL Sun,GY Tian,Y Cao,S Shi,XJ Tan,T Chen
DOI: https://doi.org/10.1088/0256-307x/19/9/334
2002-01-01
Chinese Physics Letters
Abstract:The absorption spectra of the A(1) low-frequency exciton band in quaternary compound Rb0.5Cs0.5Ag4I5 thin films have been measured by an UV-2100 spectrophotometer at the temperature (T) range from 78 to 289K. The measurements at intermediate temperatures are performed within an interval of photon energies from 3.44 to 3.70 eV. The spectra have been computer-processed to separate the A(1) band from the interband absorption edges, and to determine their parameters. the spectral peak position (E-m), the half-width (G) of the exciton band, and the Gaussian shape ratio in the spectrum. The results show that at T < 107 K, dE(m)/dT = -6.34 x 10(-4) eV(.)K(-1), dG/dT = 3.04 x 10(-4) eV(.)K(-1); at T > 107 K, dE(m)/dT = -3.01 x 10(-4) eV(.)K(-1), dG/dT = 5.47 x 10(-4) eV(.)K(-1). It is emphasized that the phase transition gamma --> beta in this material is carried out at a temperature of 107 K.
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