Ternary compounds (MeI-AgI) thin film growth and their excitonic spectroscopy studies

Jialin Sun,Haifeng Sun

1999-01-01

Abstract:Ternary compounds MeI-AgI (Me:K, Rb, Cs) thin films were grown by vacuum evaporation. A dedicated vacuum system with a cryostat was developed, which is capable of making optical spectroscopic analysis in vacuum at liquid nitrogen temperature. The exciton spectroscopic analysis of the thin films at 80 K was also given.

What problem does this paper attempt to address?

Excitonic Spectra Of Ternary Compounds On The Basis Of Agi

v k miloslavsky,o n yunakova,jialin sun

DOI: https://doi.org/10.1117/12.226158

1995-01-01

Abstract:Excitonic spectra of ternary compounds RbAg4I5 and Me2AgI3 (Me: K, Rb, Cs) are studied. The exciton binding energy Rex and band gap Eg were determined. For the Me2AgI3 the one-dimensional character of excitons was established. The temperature dependence of low-frequency exciton absorption bands parameters was studied in 80 - 300 K interval.
Investigation of Temperature Dependent Optical Modes in GexAs35-xSe65 Thin Films: Structure Specific Raman, FIR and Optical Absorption Spectroscopy

Pritam Khan,Arinjoy Bhattacharya,Abin Joshy,Vasant Sathe,Uday Deshpande,K. V. Adarsh

DOI: https://doi.org/10.48550/arXiv.1503.08106

2015-03-27

Abstract:In this article, we present a comprehensive study of temperature and composition dependent Raman spectroscopy of GexAs35-xSe65 thin films to understand different structural units responsible for optical properties. Strikingly, our experimental results uncover the ratio of GeSe4/2 tetrahedral and AsSe3/2 pyramidal units in GexAs35-xSe65 thin films and their linear scaling relationship with temperature and x. An important notable outcome of our study is the formation of Se8 rings at lower temperatures. Our experimental results further provide interesting optical features, thermally and compositionally tunable optical absorption spectra. Detailed structure specific FIR data at room temperature also present direct information on the structural units in consistent with Raman data. We foresee that our studies are useful in determining the lightinduced response of these films and also for their potential applications in optics and optoelectronics.

Materials Science,Optics
Dependence of material phases in multicomponent compounds (RbI-CsI-AgI) thin films on temperature of NaCl substrates

Guangyan Tian,Zhi Xing,Jialin Sun,Yang Cao

DOI: https://doi.org/10.1117/12.483053

2002-01-01

Abstract:In the fabrication of films, substrate temperature played the most important role. It decided the phase components of the films. Quaternary component Rb0.5Cs0.5Ag4I5 thin film was grown by vacuum evaporation on NaCl crystalline substrates. A series of thin films were synthesized at different substrate temperature, and the topographical images of these films were got by scanning electron microscope, and their exciton spectra were measured at 80K by UV-2100 spectrophotometer. It was found that the optimal substrate temperature to grow Rb0.5Cs0.5Ag4I5 was about 340K, at other temperature, there were other complex multicomponent compounds in the films.
Absorption Spectra and Ionic Conductivity of Rbxcs1-Xag4i5 Superionic Conductors Thin Films

Y Cao,JL Sun,GS Zhang,JH Guo,ZP Wang

DOI: https://doi.org/10.1088/0256-307x/22/1/069

2004-01-01

Chinese Physics Letters

Abstract:A series of RbxCs1-xAg4I5 (x = 0-1) thin films were grown by vacuum evaporation on NaCl crystal substrates at 350K. The absorption spectra of these films were measured at 80K in the wavelength range from 240nm to 400nm. It is shown that superionic conductor thin films of quaternary compound Rb0.5Cs0.5Ag4I5 and ternary compound RbAg4I5 can be obtained at x = 0.5-0.6 and x = 0.7-1, respectively. At x = 0.6-5, the combined compound film of the mixture of 30mol% RbAg4I5 and 70 mol% Rb(0.5)Cs(0.5)A(4)I(5) is presented. Then, based on the spectral positions of the A(1) and A(2) peaks, we determined that. the Rb(0.5)Cs(0.5)A(4)I(5) exciton coupling energy R-ex is 0.21 eV, the forbidden zone width E-g is 3.82eV and the exciton radius a(ex) is 0.70nm. Furthermore, the ionic conductivities of superionic conductor thin films of RbAg4I5 and Rb(0.5)Cs(0.5)A(4)I(5) and their mixture film are investigated, respectively, in the temperature range 303K-393K.
Phase Transition and Temperature Dependence of the A(1) Low-Frequency Exciton Band Parameters in Quaternary Compound Rb-0.5cs0.5ag4i5 Thin Films

JL Sun,GY Tian,Y Cao,S Shi,XJ Tan,T Chen

DOI: https://doi.org/10.1088/0256-307x/19/9/334

2002-01-01

Chinese Physics Letters

Abstract:The absorption spectra of the A(1) low-frequency exciton band in quaternary compound Rb0.5Cs0.5Ag4I5 thin films have been measured by an UV-2100 spectrophotometer at the temperature (T) range from 78 to 289K. The measurements at intermediate temperatures are performed within an interval of photon energies from 3.44 to 3.70 eV. The spectra have been computer-processed to separate the A(1) band from the interband absorption edges, and to determine their parameters. the spectral peak position (E-m), the half-width (G) of the exciton band, and the Gaussian shape ratio in the spectrum. The results show that at T < 107 K, dE(m)/dT = -6.34 x 10(-4) eV(.)K(-1), dG/dT = 3.04 x 10(-4) eV(.)K(-1); at T > 107 K, dE(m)/dT = -3.01 x 10(-4) eV(.)K(-1), dG/dT = 5.47 x 10(-4) eV(.)K(-1). It is emphasized that the phase transition gamma --> beta in this material is carried out at a temperature of 107 K.
The Study of Composition Non-Uniformity in Ternary Mgxzn1-Xo Thin Films

J Chen,WZ Shen,NB Chen,DJ Qiu,HZ Wu

DOI: https://doi.org/10.1088/0953-8984/15/30/102

2003-01-01

Abstract:We report on the growth of single cubic-phase MgZnO thin films by reactive electron beam evaporation on sapphire substrates. A detailed theoretical procedure has been employed to analyse the transmission profile for information on composition non-uniformity, in addition to the exact determination of the band gap energy. The study of composition non-uniformity has been further extended to both the typically reported hexagonal and cubic MgZnO thin films. It is found that the composition non-uniformity strongly depends on the Mg content, which can be well explained by the ZnO-MgO phase diagram.
The Absorption Spectra of Crystal Thin Film Cs3Cu2I5

Jl Sun,Qh Guo,Y Wu,Sq Li

DOI: https://doi.org/10.3321/j.issn:1000-0593.1999.05.003

1999-01-01

Abstract:In this paper we measured the absorption spectra of crystal thin film Cs3Cu2I5 at room and liquid nitrogen temperatures, respectively, and calculated the excitonic coefficient of the material. The excitonic coupling energy deltaE(ex)(1) = (0.53 +/- 0.07) eV, excitonic radius a(ex) = 0. 326 nm,and forbidden zone width E(g) = (5.00 +/- 0.07) eV. The spectral analysis shows that the electron and exciton excitations of the Cs3Cu2I5 localize in the CuI subcrystal lattice, and reveals the law that governs the variance of the first excitonic peak position of the serial Cs(x)Cu(1-x) I compounds with their mol-components at low temperature.
Dependence of Material Phases in Multicomponent Compounds (Rbl-Csl-agl) Thin Films on Temperature of NaCl Substrates

Guangyan Tian,Zhi Xing,Jialin Sun,Yang Cao

DOI: https://doi.org/10.1117/12.483053

2002-01-01

Abstract:In the fabrication of films, substrate temperature played the most important role. It decided the phase components of the films. Quaternary component Rb0.5Cs0.5Ag4I5 thin film was grown by vacuum evaporation on NaCl crystalline substrates. A series of thin films were synthesized at different substrate temperature, and the topographical images of these films were obtained by scanning electron microscope, and their exciton spectra were measured at 80K by UV-2100 spectrophotometer. It was found that the optimal substrate temperature to grow Rb0.5Cs0.5Ag4I5 was about 340K, at other temperature, there were other complex multicomponent compounds in the films.
Refractive Indeces and Third-order Susceptibilities of MgxZn1-xO Thin Films

CHEN Nai-bo,WU Hui-zhen

DOI: https://doi.org/10.3321/j.issn:1005-0086.2006.05.011

2006-01-01

Abstract:The Mg_xZn_(1x)O thin films were deposited on the sapphire and silica glass substrates by reactive electron beam evaporation deposition.Refraction indices of the cubic-phase Mg_xZn_(1-x)O(0.55≤x≤1.00) thin film alloys were obtained by the transmission spectra and Manifacier method.The Mg-concentration dependent dispersion at the wavelength from 400 to 800 nm follows the first-order Sellmeier dispersion equation that is similar to those of hexagonal Mg_xZn_(1-x)O reported previously.Using optical Kerr effect(OKE),the third-order susceptibilities of the ternary films over a wide range of Mg concentrations were determined.The sample with phase mixture of both hexagonal and cubic structures shows the largest third-order susceptibility.The difference observed in the magnitude of χ~((3)) of Mg_xZn_(1-x)O films is attributed to the different microstructure of the ternary films,such as crystalline phase separation and crystal grains that enhance the stimulated scattering.
Third-order Optical Nonlinearities of Zn_(1-x)MgxO Thin Films

Naibo Chen,Huizhen Wu,Tianning Xu,Ping Yu,Qiu Dong-Jiang

IF: 2.56

2005-01-01

Chinese Optics Letters

Abstract:The Zn_(1-x)MgxO thin films were deposited on sapphire substrates by reactive electron beam evaporation deposition (REBED). The X-ray diffraction (XRD) measurement demonstrates that these films undergo phase transition from hexagonal to cubic with increasing the Mg concentration. Absorption coefficients at 532 nm of the samples were obtained from the absorption spectra. Using optical Kerr effect, the third-order susceptibilities of the ternary films over a wide range of Mg concentrations were determined. The magnitude of ?(3) of the ternary Zn_(1-x)MgxO films is order of 10^(-11) esu at ? = 532 nm. The sample with phase mixture of both hexagonal and cubic structures shows the largest third-order susceptibility. The difference observed in the magnitude of ?(3) of Zn_(1-x)MgxO films is attributed to the different microstructures of the ternary films, such as crystalline phase separation and crystal grains that enhance stimulated scattering.
Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

Y. Liu,T. Miller,T. C. Chiang

DOI: https://doi.org/10.1088/0953-8984/23/36/365302

2011-01-01

Journal of Physics Condensed Matter

Abstract:We report on the preferred trilayer growth of indium films on Si(111) studied by angle-resolved photoemission spectroscopy. By employing an interfactant and optimized annealing conditions, the kinetic constraint on the In atoms due to the substrate is greatly reduced and 'electronic growth'-where film morphology is controlled by the quantized electronic structure of the film-can be achieved at low coverage. Our photoemission spectra reveal that films of 4 ML (monolayers) and 7 ML thicknesses are energetically favored due to a lower surface energy, as confirmed by theoretical calculations. A detailed comparison of the photoemission spectra between In films grown on the In-√3 × √3/Si(111) surface and those on the Si(111) 7 × 7 surface shows that the √3 × √3 interfactant is a better template for growing In films at low coverage and effectively reduces the electronic coupling between the film and the substrate. In addition, the observed band structures of In films are in reasonable agreement with first-principles calculations and suggest that In films grown on the √3 × √3 interfactant might already be close to the bulk-like body-centered tetragonal structure at around 10 ML.
Cubic MgxZn1−xO Films Grown on SiO2 Substrates

P Yu,HZ Wu,NB Chen,TN Xu,YF Lao,J Liang

DOI: https://doi.org/10.1016/j.optmat.2004.11.035

IF: 3.754

2006-01-01

Optical Materials

Abstract:Cubic MgxZn1−xO thin films were deposited on amorphous silicon dioxide substrate by reactive electron beam evaporation (REBE) at low temperature (250°C). The characterizations of crystalline structure and morphology of the ternary films demonstrated that the cubic MgxZn1−xO films are of highly (001) orientation and have uniform surface. The cubic Mg0.83Zn0.17O film deposited on quartz demonstrates wide band gap (6.45eV) and has very high transparency (>95%) in broad wavelength range from ultraviolet (0.3μm) to mid-infrared light (5.5μm). The refractive indices for the cubic MgxZn1−xO decrease as Mg fraction increases. The characters of low optical absorption in broad wavelength range and feasibility of changing refractive index by Mg fraction variation in the ternary MgxZn1−xO films could render potential applications in integrated optical devices.
Excitonic feature in CsAg 2 I 3 crystals prepared by Bridgman method

Shun Ibuki,Taketoshi Kawai

DOI: https://doi.org/10.35848/1347-4065/ad2d7b

IF: 1.5

2024-02-27

Japanese Journal of Applied Physics

Abstract:Abstract This study investigated the optical spectra of the CsAg 2 I 3 crystals at low temperatures. In the reflection spectrum, remarkable reflection peaks owing to band-edge exciton transitions were observed at approximately 3.8 eV above the fundamental absorption edge at 3.6 eV. Under excitation in the energy region of exciton transitions, an intense luminescence band attributed to a self-trapped exciton (STE) was observed at 3.37 eV. In addition to STE luminescence, a weak luminescence line was observed at 3.77 eV. Because the value of 3.77 eV is practically equal to the lowest exciton transition energy estimated from the reflection spectrum, the luminescence line at 3.77 eV comes from a free exciton (FE). The intensities of the FE and STE luminescence peaks decrease with increasing temperature. The activation energies of the FE and STE were estimated from the quenching of luminescence intensities. The features of the exciton states in the CsAg 2 I 3 crystals are presented.

physics, applied
Preparation and Microstructure of Nanocrystalline Rb0.5Cs0.5Ag4I5 Thin Films on NaCl Substrates

Jia‐Lin Sun,Guohong Tian,Sheng Liu,Yang Cao,Jun Guo

DOI: https://doi.org/10.1016/s0042-207x(03)00033-2

IF: 4

2003-01-01

Vacuum

Abstract:Nanocrystalline Rb 0.5 Cs 0.5 Ag 4 I 5 thin films were prepared by vacuum thermal evaporation on NaCl single crystal substrates. The microstructure and the electronic energy states of the thin films were examined by scanning electron microscopy, transmission electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The results showed that the obtained Rb 0.5 Cs 0.5 Ag 4 I 5 layer has an epitaxial orientation relationship with the NaCl substrate, and the unit cell of nanocrystalline grain Rb 0.5 Cs 0.5 Ag 4 I 5 thin films belongs to cubic crystal system. The principal X-ray diffraction peaks at d =3.7666, 3.4557, 3.3759, 2.3026, 2.1839, 2.1385, 1.9968, and 1.9624 A are probably related to new quaternary compound Rb 0.5 Cs 0.5 Ag 4 I 5 thin films structure. Based on which, it can be approximately concluded that the lattice constant is a =11.31 A.
Syntheses, Structures, Bonding, and Optical Properties of Trinuclear Cluster Iodides: M 3 (μ 3 -I) 2 (μ-dppm) 3 ·I (M=Cu, Ag), dppm=bis(diphenylphosphino)methane)

Wen-Bo Zhou,Zhen-Chao Dong,Jun-Ling Song,Hui-Yi Zeng,Rong Cao,Guo-Cong Guo,Jin-Shun Huang,Jun Li

DOI: https://doi.org/10.1023/A:1015195130685

2002-01-01

Journal of Cluster Science

Abstract:The title compounds were obtained from the reactions of copper or silver monohalides with the bidentate bis(diphenylphosphino)methane (dppm) ligand at room temperature in a mixed solvent. Single-crystal X-ray diffraction analyses indicate that both compounds crystallize in a monoclinic system but in different space groups. The structures are characterized by a trinuclear [M 3 I 2 (dppm) 3 ] + cation with a trigonal-bipyramid [M 3 ( μ 3 -I) 2 ] core. In agreement with the geometric characteristics of the M 3 triangles, 31 P NMR spectra exhibit a single peak for the [Cu 3 ] cluster but a double-peak for the [Ag 3 ] cluster. Preliminary optical studies by UV/Vis and emission techniques show major absorption shoulders at ∼286 nm for Cu 3 I 2 (dppm) 3 ·I and ∼254 nm for Ag 3 I 2 (dppm) 3 ·I, but no luminescence in the non-degassed MeCN solution at 298 K. The structures, bonding, electronic excitations and emissions are discussed based on relativistic density functional theory calculations.
Light Emission from Multiple Self-Trapped Excitons in 1D Ag-Based Ternary Halides

Jiahao Xie,Zewei Li,Shengqiao Wang,Lijun Zhang

DOI: https://doi.org/10.1088/1674-1056/ad7e9c

2024-09-25

Chinese Physics B

Abstract:Ternary metal halides based on Cu(I) and Ag(I) have attracted intensive attention in optoelectronic applications due to their excellent luminescent properties, low toxicity, and robust stability. While the self-trapped excitons (STEs) emission mechanisms of Cu(I) halides are well understood, the STEs in Ag(I) halides remain less thoroughly explored. This study explores the STE emission efficiency within the A 2 AgX 3 (A = Rb, Cs; X = Cl, Br, I) system by identifying three distinct STE states in each material and calculating their configuration coordinate diagrams. We find that the STE emission efficiency in this system is mainly determined by STE stability and influenced by self-trapping and quenching barriers. Moreover, we investigate the impact of structural compactness on emission efficiency and find that the excessive electron-phonon coupling in this system can be reduced by increasing structural compactness. The atomic packing factor is identified as a low-cost and effective descriptor for predicting STE emission efficiency in both Cs 2 AgX 3 and Rb 2 AgX 3 systems. These findings can deepen our understanding of STE behavior in metal halide materials and offer valuable insights for the design of efficient STE luminescent materials.

physics, multidisciplinary
Ternary mixed-anion semiconductors with tunable band gaps from machine-learning and crystal structure prediction

Maximilian Amsler,Logan Ward,Vinay I. Hegde,Maarten G. Goesten,Xia Yi,Chris Wolverton

DOI: https://doi.org/10.1103/PhysRevMaterials.3.035404

2018-12-07

Abstract:We report the computational investigation of a series of ternary X$_4$Y$_2$Z and X$_5$Y$_2$Z$_2$ compounds with X={Mg, Ca, Sr, Ba}, Y={P, As, Sb, Bi}, and Z={S, Se, Te}. The compositions for these materials were predicted through a search guided by machine learning, while the structures were resolved using the minima hopping crystal structure prediction method. Based on $\textit{ab initio}$ calculations, we predict that many of these compounds are thermodynamically stable. In particular, 21 of the X$_4$Y$_2$Z compounds crystallize in a tetragonal structure with $\textit{I-42d}$ symmetry, and exhibit band gaps in the range of 0.3 and 1.8 eV, well suited for various energy applications. We show that several candidate compounds (in particular X$_4$Y$_2$Te and X$_4$Sb$_2$Se) exhibit good photo absorption in the visible range, while others (e.g., Ba$_4$Sb$_2$Se) show excellent thermoelectric performance due to a high power factor and extremely low lattice thermal conductivities.

Materials Science
Synthesis and characterization of AgI thin films at low temperature

Babasaheb Sankapal,Prashant Baviskar,Dipak Salunkhe

DOI: https://doi.org/10.1016/j.jallcom.2010.06.190

IF: 6.2

2010-09-01

Journal of Alloys and Compounds

Abstract:The growth of AgI (silver iodide) thin films has been performed in aqueous medium using simple chemical method at room temperature (25°C). Silver nitrate and potassium iodide have been used as source materials. Thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), surface photovoltage (SPV) and optical absorption spectroscopy. Glass and indium doped tin oxide (ITO) coated glass was used as substrates. The thin films were surface homogeneous with mixed β and γ-phases with surface roughness value of 21nm. Optical transmission on glass exceeds 80% for 150nm thick film with the direct band gap value of 2.85eV. The change in crystal phases after transition temperature is studied by SPV measurements.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Structure of energy bands in superionic conductor MAg4I5 (M:K, Rb)

Jialin Sun,Shiqun Li

1999-01-01

Abstract:The B1-band of optical absorption spectra of MAg4I5 (M:K, Rb) thin film was analyzed. The contribution of 5p (I) and 4d (Ag) wave functions to electron state in MAg4I5's upper valence band was calculated. The spin-orbit split energy was demonstrated with the introduction of M+ ion. The contribution of 5p (I) wave function to the upper valence band of MAg4I5 was less than that of AgI.
Investigations on structural and Opto-electrical characterization of Ag-TCNQ (Metal-Organic Frameworks) as complex thin films for potential device applications

Mahmoud S. Dawood,N. M. Hassan,W. M. Desoky

DOI: https://doi.org/10.1088/1402-4896/ad5b29

2024-06-26

Physica Scripta

Abstract:The silver- (7, 7, 8, 8-tetracyanoquinodimethane (Ag-TCNQ) organometallic complex was synthesized chemically as a nano-powder and thereafter deposited as a thin film by thermal evaporation. The monoclinic, needle-like, polycrystalline structure of the Ag-TCNQ complex was analyzed employing X-ray diffraction (XRD) and a scanning electron microscope (SEM). Whereas their chemical structure and stability were explored using Fourier transformation infrared (FTIR) techniques. The findings imply a charge transfer of degree -0.5 between TCNQo and TCNQ-, as revealed by the shift of the bands of the C≡N stretching and the (C═C-H) bond positioned at 2198 and 824 cm-1, respectively. As well as the optical properties of Ag-TCNQ thin film were studied using spectrophotometric measuring in the wavelength ranging 200 to 2500 nm. The measurement of transmittance and reflectance spectra were employed to calculate the refractive index (n), dielectric constant, absorption index (k), surface and volume energy loss functions, and optical conductivity. In the normal dispersion zone, optical characteristics such free charge carrier concentration, infinity dielectric constant (ε∞), lattice dielectric constant (εL), oscillator energy (Eo), and dispersion energy (Ed) were estimated. Furthermore, the optoelectronic nonlinear optical features and electronic transitions for the Ag-TCNQ thin film were assessed. Finally, these findings are promising milestones on the path to providing convincing evidence for the synthesis of stoichiometric thermally stable Ag-TCNQ thin film by conventional thermal evaporation technique that is potential to be utilized in optoelectronic devices applications.

physics, multidisciplinary

Ternary compounds (MeI-AgI) thin film growth and their excitonic spectroscopy studies

Excitonic Spectra Of Ternary Compounds On The Basis Of Agi

Investigation of Temperature Dependent Optical Modes in GexAs35-xSe65 Thin Films: Structure Specific Raman, FIR and Optical Absorption Spectroscopy

Dependence of material phases in multicomponent compounds (RbI-CsI-AgI) thin films on temperature of NaCl substrates

Absorption Spectra and Ionic Conductivity of Rbxcs1-Xag4i5 Superionic Conductors Thin Films

Phase Transition and Temperature Dependence of the A(1) Low-Frequency Exciton Band Parameters in Quaternary Compound Rb-0.5cs0.5ag4i5 Thin Films

The Study of Composition Non-Uniformity in Ternary Mgxzn1-Xo Thin Films

The Absorption Spectra of Crystal Thin Film Cs3Cu2I5

Dependence of Material Phases in Multicomponent Compounds (Rbl-Csl-agl) Thin Films on Temperature of NaCl Substrates

Refractive Indeces and Third-order Susceptibilities of MgxZn1-xO Thin Films

Third-order Optical Nonlinearities of Zn_(1-x)MgxO Thin Films

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

Cubic MgxZn1−xO Films Grown on SiO2 Substrates

Excitonic feature in CsAg 2 I 3 crystals prepared by Bridgman method

Preparation and Microstructure of Nanocrystalline Rb0.5Cs0.5Ag4I5 Thin Films on NaCl Substrates

Syntheses, Structures, Bonding, and Optical Properties of Trinuclear Cluster Iodides: M 3 (μ 3 -I) 2 (μ-dppm) 3 ·I (M=Cu, Ag), dppm=bis(diphenylphosphino)methane)

Light Emission from Multiple Self-Trapped Excitons in 1D Ag-Based Ternary Halides

Ternary mixed-anion semiconductors with tunable band gaps from machine-learning and crystal structure prediction

Synthesis and characterization of AgI thin films at low temperature

Structure of energy bands in superionic conductor MAg4I5 (M:K, Rb)

Investigations on structural and Opto-electrical characterization of Ag-TCNQ (Metal-Organic Frameworks) as complex thin films for potential device applications