Abstract:Time precision switching is crucial to a high-precision synchronization control system with several synchronized sources. Compared with the other high-power switches, a GaAs photoconductive semiconductor switch (PCSS) with a litter time jitter has been widely used in a precision synchronization control system. There is little work on the time jitter of a GaAs PCSS. In this paper, a formula of GaAs PCSS time jitter is derived by the qualitative theoretical derivation through using the probability distribution of the output electrical pulse and the corresponding relation between the time and electrical waveform of GaAs PCSS, and combining the carrier transport process. In experiment, a neodymium-doped yttrium aluminum garnet nanosecond laser beam is split by a semipermeable half mirror into two optical beams, and then these two beams simultaneously trigger two identical GaAs PCSSs in two parallel circuits. As the energy of a triggering laser pulse is fixed at 0.35 mJ, four different laser pulse widths, namely 30 ns, 22 ns, 16 ns and 11 ns, respectively, are used to trigger the GaAs PCSSs. The bias voltage changes from 0.1 kV to 1 kV in steps of 0.1 kV, and it is used in the above-mentioned experiment. The PCSSs are triggered 20 times at each of the bias voltage values. The time jitter of the GaAs PCSS with a 3-mm gap can be measured. By analyzing the experimental data, we conclude that the time jitter of the GaAs PCSS decreases with the triggering laser pulse width decreasing under the condition of different bias voltage. In the linear mode, the GaAs PCSS illuminated by a photon with a proper wavelength creates an electron-hole pair. The characteristic of the triggering laser pulse determines that of the output electrical pulse. With the energy of triggering laser pulse fixed, the fluctuation of electrical pulse increases fast with its pulse width decreasing. Moreover, according to the derived formula for a time jitter, the GaAs PCSS time jitter decreases with triggering laser pulse width narrowing, under the different externally applied bias voltages. It is demonstrated that the theoretical and experimental results of the relationship between the triggering laser pulse width and the GaAs PCSS time jitter are consistent. The obtained results provide a basis for further reducing the GaAs PCSS time jitter, which is important for a next-generation fusion research facility and laser trigger antenna array of generating short pulse sequence.

Effects of Trigger Laser Pulse Width on the Jitter Time of GaAs Photoconductive Semiconductor Switch.

Influence of the Incident Laser Pulse Energy on Jitter Time of GaAs Photoconductive Semiconductor Switches.

Time Jitter Characteristics of GaAs Photoconductive Semiconductor Switch in Linear Mode

Investigation of Ultra-Fast Accurately Synchronization Control GaAs Photoconductive Switches

Effect of Transition Mechanism of Photon-Induced Carriers on Time Jitter of GaAs Photoconductive Semiconductor Switches

Investigation of Gaas Pcss Triggered by Laser Pulses with Different Parameters

The Laser Flares-Modulated Delay Jitter Characteristics of GaAs PCSS under High DC Bias

Synchronization of Two GaAs Photoconductive Semiconductor Switches Triggered by Two Laser Diodes

Investigation of Delay Jitter of Avalanche GaAs PCSS for Triggering High-Voltage Gas Switch

Generation Of Steady And Jitter-Free Sub-Nanosecond Electrical Pulses With Gaas Photoconductive Switches

Research on Time Jitter of GaAs Photoconductive Semiconductor Switches in the Negative Differential Mobility Region

Fiber-Optically Triggered Four Parallel Gaas Photoconductive Semiconductor Switches

Investigation of Semi-Insulating GaAs Photoconductive Switches Triggered by Semiconductor Lasers

Investigation on the Mechanism of Triggering Efficiency of High-Power Avalanche GaAs Photoconductive Semiconductor Switch

Characteristics of GaAs PCSS triggered by 1 μJ laser diode

Research on Characteristics of GaAs PCSS Triggered by 905nm Laser Diode Array

Evaluation of Pulsed Spark Discharge for Triggering GaAs Photoconductive Semiconductor Switches

Pulsewidth Control of Nonlinear GaAs Photoconductive Semiconductor Switch

Effect of Capacitance on Positive and Negative Symmetric Pulse with Fast Rising Edge Based on GaAs Photoconductive Semiconductor Switch

Comparative Study on GaAs Photoconductive Semiconductor Switches

GaAs Photoconductive Semiconductor Switch Triggered by Laser Spots with Different Profiles