Preparation of Aluminum-Based Porous Al2O3 Humidity-Sensitive Thin Film Sensors by Microarc Oxidation
Junqing XingMeiqi XuKangcai XuChengtao Yanga State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu,Chinab Yangtze Delta Region Institute (Huzhou),University of Electronic Science and Technology of China,Huzhou,China
DOI: https://doi.org/10.1080/10584587.2023.2296321
2024-02-09
Integrated Ferroelectrics
Abstract:In order to improve the stability, and sensitivity and response speed of moisture-sensitive sensors, the microarc oxidation process is used to realize the preparation of porous Al 2 O 3 structure humidity-sensitive thin films on aluminum substrate and combined with magnetron sputtering process to realize the preparation of the humidity-sensitive sensor. After the Al 2 O 3 moisture-sensitive films are prepared by the mechanical polishing, the microarc oxidation process platform and aging processes, moisture-sensitive films will be characterized by XRD and SEM. The results show that the peak intensity of α-Al 2 O 3 diffraction peaks in Al 2 O 3 humidity-sensitive thin films can be enhanced by increasing the microarc oxidation current. By building the humidity device platform for humidity-sensitive testing, the change of ambient humidity will lead to different changes of resistance and capacitance of the films, and the moisture-sensitive devices have better sensitivity at a lower frequency of 100 Hz.
engineering, electrical & electronic,physics, condensed matter, applied