Abstract:Most of the research on silicon-on-insulator integrated circuits so far has been focused on applications for telecommunication. By using the large refractive index of silicon, compact complex photonic functions have been integrated on a silicon chip. However, the transparency of silicon up to 8.5 μm enables the use of the platform for the mid infrared wavelength region, albeit limited by the absorption in silicon oxide from 4 μm on. This could lead to a whole new set of integrated photonics circuits for sensing, given the distinct absorption bands of many molecules in this wavelength region. These long wavelength integrated photonic circuits would preferably need broadband or widely tunable sources to probe these absorption bands. We propose the use of nonlinear optics in silicon wire waveguides to generate light in this wavelength range. Nonlinear interactions in just a few cm of silicon wire waveguides can be very efficient as a result of both the high nonlinear index of silicon and the high optical confinement obtained in these waveguides. We demonstrate the generation of a supercontinuum spanning from 1.53 μm up to 2.55 μm in a 2 cm dispersion engineered silicon nanowire waveguide by pumping the waveguide with strong picoseconds pulses at 2.12 μm [1]. Furthermore we demonstrate broadband nonlinear optical amplification in the mid infrared up to 50 dB [2] in these silicon waveguides. By using this broadband parametric gain a silicon-based synchronously pumped optical parametric oscillator (OPO) is constructed [3]. This OPO is tunable over 70 nm around a central wavelength of 2080 nm. Finally, we also demonstrate the use of higher order dispersion terms to get phase matching between optical signals at very different optical frequencies in silicon wire waveguides. In this way we demonstrate conversion of signals at 2.44 μm to the telecommunication band with efficiencies up to +19.5 dB [4]. One particularly attractive application of such wide conversion is the possibility of converting weak signals in the mid-IR to the telecom window after which they can be detected by a high-sensitivity telecom-band optical receiver.

Silicon waveguide with four zero-dispersion wavelengths and its application in on-chip octave-spanning supercontinuum generation.

On-chip Two-Octave Supercontinuum Generation by Enhancing Self-Steepening of Optical Pulses

On-Chip Octave-Spanning Supercontinuum in Nanostructured Silicon Waveguides Using Ultralow Pulse Energy

Three-Octave Supercontinuum Generation Using SiO2 Cladded Si3N4 Slot Waveguide with All-Normal Dispersion

Efficient dispersion engineering for three-octave-spanning supercontinuum generation in nanophotonic waveguides

Numerical Study on Flat Dispersion in a Single-Layer Si3N4 Coupled-Waveguides with Four Zero-Dispersion Wavelengths for Supercontinuum Generation

On-chip octave-spanning flat supercontinuum in all-normal-dispersion silicon nitride waveguides

Supercontinuum generation assisted by dispersive waves trapping in dispersion-managed integrated silicon waveguides

Supercontinuum generation in dispersion engineered highly doped silica glass waveguides

Supercontinuum Generation in Dispersion Engineered 4H-Sic-on-insulator Waveguides at Telecom Wavelengths

Single-mode Dispersion-engineered Nonlinear Integrated Waveguides for Ultra-broadband Optical Amplification and Wavelength Conversion

Broadband Mid-Infrared Supercontinuum Generation in Dispersion-Engineered As2S3-silica Nanospike Waveguides Pumped by 2.8 Μm Femtosecond Laser

Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources

Optical Signal Processing In Silicon Nano-Waveguides

Dispersive wave control enabled by silicon metamaterial waveguides

Flattened Dispersion in Silicon Slot Waveguides

Octave-spanning supercontinuum generation in a CMOS-compatible thin Si3N4 waveguide coated with highly nonlinear TeO2

Nonlinear Propagation and Supercontinuum Generation of a Femtosecond Pulse in Silicon Waveguide

Simulation on a dispersion-managed 4H-SiC on insulator waveguide for infrared supercontinuum generation

Silicon-on-Nitride Waveguide with Ultralow Dispersion over an Octave-Spanning Mid-Infrared Wavelength Range

Achieving Uniform Chromatic Dispersion over a Wide Wavelength Range in Highly Nonlinear Slot Waveguides