Mercury-probe measurement of electron mobility in β-Ga2O3 using junction moderated dielectric relaxation
Jian V. Li,Yunjo Kim,Adam R. Charnas,Brenton A. Noesges,Prescott E. Evans,Thaddeus J. Asel,Adam T. Neal,Cameron A. Gorsak,Hari P. Nair,Shin Mou
DOI: https://doi.org/10.35848/1347-4065/ad8531
IF: 1.5
2024-10-30
Japanese Journal of Applied Physics
Abstract:We demonstrate the junction-moderated dielectric relaxation method to measure the in-plane electron mobility in β-Ga2O3 epitaxial layers. Unlike the Hall technique and channel mobility measurement in field-effect transistors, this method does not require the deposition of permanent metal contacts. Rather, it measures the bias voltage and frequency dependence of the equivalent capacitance of the Mercury/β-Ga2O3/Mercury structure consisting of a Schottky contact, a quasi-neutral thin film semiconductor, and an Ohmic contact connected in series. The intrinsic dielectric relaxation of the bulk β-Ga2O3 semiconductor typically occurs at ∼1012 s−1, but when moderated by the Mercury/β-Ga2O3 Schottky junction, it manifests itself as an inflection in the capacitance-frequency characteristics at a much lower frequency of ∼106 s−1 within the range of most capacitance measuring instruments. Using carrier density and layer thickness determined from capacitance-voltage measurement, we extract the electron mobility of β-Ga2O3 from the junction-moderated dielectric relaxation frequency.
physics, applied