Abstract:A central question in graphene chemistry is to what extent chemical modification can control an electronically accessible band gap in monolayer and bilayer graphene (MLG and BLG). Density functional theory predicts gaps in covalently functionalized graphene as high as 2 eV, while this approach neglects the fact that lattice symmetry breaking occurs over only a prescribed radius of nanometer dimension, which we label the S-region. Therefore, high chemical conversion is central to observing this band gap in transport. We use an electrochemical approach involving phenyl-diazonium salts to systematically probe electronic modification in MLG and BLG with increasing functionalization for the first time, obtaining the highest conversion values to date. We find that both MLG and BLG retain their relatively high conductivity after functionalization even at high conversion, as mobility losses are offset by increases in carrier concentration. For MLG, we find that band gap opening as measured during transport is linearly increased with respect to the I(D)/I(G) ratio but remains below 0.1 meV in magnitude for SiO(2) supported graphene. The largest transport band gap obtained in a suspended, highly functionalized (I(D)/I(G) = 4.5) graphene is about 1 meV, lower than our theoretical predictions considering the quantum interference effect between two neighboring S-regions and attributed to its population with midgap states. On the other hand, heavily functionalized BLG (I(D)/I(G) = 1.8) still retains its signature dual-gated band gap opening due to electric-field symmetry breaking. We find a notable asymmetric deflection of the charge neutrality point (CNP) under positive bias which increases the apparent on/off current ratio by 50%, suggesting that synergy between symmetry breaking, disorder, and quantum interference may allow the observation of new transistor phenomena. These important observations set definitive limits on the extent to which chemical modification can control graphene electronically.

Controlled Modulation of Electronic Properties of Graphene by Self-Assembled Monolayers on SiO2 Substrates.

An All-Optical Modulation Method in Sub-Micron Scale.

High-Performance Graphene Devices on SiO2/Si Substrate Modified by Highly Ordered Self-Assembled Monolayers

Linear Tuning of Charge Carriers in Graphene by Organic Molecules and Charge-Transfer Complexes

High-performance graphene devices on SiO₂/Si substrate modified by highly ordered self-assembled monolayers.

Controlled assembly of SiOx nanoparticles in graphene

Doping Monolayer Graphene with Single Atom Substitutions

Understanding and Controlling the Substrate Effect on Graphene Electron-Transfer Chemistry Via Reactivity Imprint Lithography.

Controlling doping in graphene through a SiC substrate: A first-principles study

Modulating electronic structure of graphene overlayers through electrochemical intercalation

Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light

Tailoring quantum transport efficiency in molecular junctions via doping of graphene electrodes

Modulating the Electronic Properties of Monolayer Graphene Using a Periodic Quasi-One-Dimensional Potential Generated by Hex-Reconstructed Au(001)

Controlled Gas Molecules Doping of Monolayer MoS2 Via Atomic-Layer-Deposited Al2O3 Films.

Modulating the Electronic Properties of Graphene by Self-Organized Sulfur Identical Nanoclusters and Atomic Superlattices Confined at an Interface

Kinetic Ionic Permeation and Interfacial Doping of Supported Graphene.

Controlled Ambipolar-to-unipolar Conversion in Graphene Field-Effect Transistors Through Surface Coating with Poly(ethylene Imine)/poly(ethylene Glycol) Films.

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Electronic Doping and Enhancement of n‐Channel Polycrystalline OFET Performance through Gate Oxide Modifications with Aminosilanes

Disorder Imposed Limits of Mono- and Bilayer Graphene Electronic Modification Using Covalent Chemistry.

First-principles study of multi-control graphene doping using light-switching molecules