Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

High-Performance Graphene Devices on SiO2/Si Substrate Modified by Highly Ordered Self-Assembled Monolayers

High-performance graphene devices on SiO₂/Si substrate modified by highly ordered self-assembled monolayers.

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Scalable Fabrication of Graphene Devices Through Photolithography

Atomically Flat and Thermally Stable Graphene on Si(111) with Preserved Intrinsic Electronic Properties.

Single-layer Graphene on Al2O3/Si Substrate: Better Contrast and Higher Performance of Graphene Transistors.

Opening the Band Gap of Graphene Through Silicon Doping for the Improved Performance of Graphene/gaas Heterojunction Solar Cells.

Graphene Mobility Enhancement By Organosilane Interface Engineering

Controlled Modulation of Electronic Properties of Graphene by Self-Assembled Monolayers on SiO2 Substrates.

Controlled assembly of SiOx nanoparticles in graphene

Lithography-free Fabrication of High Quality Substrate-Supported and Freestanding Graphene Devices

Electronic properties of graphene altered by substrate surface chemistry and externally applied electric field

Fast Transfer-free Synthesis of High-quality Monolayer Graphene on Insulating Substrates by Simple Rapid Thermal Treatment

Insulating SiO2 under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication

Insulating SiO 2 under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication

Low Carrier Density Epitaxial Graphene Devices On SiC

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

High-quality MoS2 monolayers with largely enhanced electrical properties by plasma-treated SiO2/Si substrates based chemical vapor deposition

Ultrafast Growth of Uniform Multi-Layer Graphene Films Directly on Silicon Dioxide Substrates

Giant Carrier Mobility in Graphene with Enhanced Shubnikov–de Haas Quantum Oscillations: Implications for Low-Power-Consumption Device Applications