Modulating electronic structure of graphene overlayers through electrochemical intercalation

Siqin Zhao,Rentao Mu,Yanxiao Ning,Qiang Fu,Xinhe Bao
DOI: https://doi.org/10.1016/j.apsusc.2020.146359
IF: 6.7
2020-08-01
Applied Surface Science
Abstract:<p>Modulating electronic structure of graphene overlayers is highly demanding for its potential applications in microelectronics, sensors, and catalysis, which however remains a grand challenge. Here, we report electrochemistry-involved treatments to tune the electronic structure of graphene overlayers. Both galvanic corrosion and potential-aided intercalation of H<sub>2</sub>O were employed to change the graphene/Cu interfaces to graphene/Cu<sub>2</sub>O/Cu and graphene/H<sub>2</sub>O/Cu interfaces, respectively. Electronic properties and structural changes of the graphene/Cu interfaces were investigated by X-ray photoelectron spectroscopy, in-situ Raman, and atomic force microscopy. The formed Cu<sub>2</sub>O interlayer blocks the charge transfer between graphene overlayer and Cu substrate, which turns n-type doping of the as-grown graphene to free-standing state. In contrast, the intercalated H<sub>2</sub>O interlayer induces much stronger n-type doping in graphene through the electrostatic field effect generated by confined H<sub>2</sub>O. This work offers efficient but mild methods to modulate the doping state of graphene layers.</p>
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
What problem does this paper attempt to address?