Abstract:Monolithic RC frequency references offer attractive integration, cost, and power benefits compared to bulky crystal or MEMS oscillators. However, while the temperature coefficients (TCs) of on-chip MIM capacitors is small (tens of on-chip resistors have large TCs (up to thousands of and process variation, that ultimately limit performance. For a stable RC time constant $(\tau_{\mathrm{R}\mathrm{C}})$ , CMOS RC frequency references usually require delicate design techniques to compensate for the TC and process spread of the on-chip resistors, commonly implemented by manipulating resistors of different TCs or using high-order polynomial compensation [1]–[3]. Fig. 1 (top-left) shows a conventional practice of TC calibration for $\tau_{\mathrm{R}\mathrm{C}}$ , where a second resistor $\mathrm{R}_{\text{Trim}}$ with a different TC profile is used to cancel or adjust the first-order TC of $\mathrm{R}_\tau$ . Due to the high-order TCs of both $\mathrm{R}_{\text{Trim}}$ and $\mathrm{R}_{\tau}$ , the TC of $\tau_{\mathrm{R}\mathrm{C}}$ is still high after such calibration. As a result, high-order batch trimming based on polynomial compensation up to $6^{\mathrm{t}\mathrm{h}}$ order is used to reduce the TC of [4]–[6] as shown in Fig. 1 (top-right). However, the residual die-to-die error (DDE) due to process spread after such batch trimming limits the TC to ±200ppm or more [4], while a TC of ±90ppm is achieved at the cost of a compromised supply sensitivity and an increased power overhead [5].

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