Abstract:Enhancing the mobility in metal-oxide-semiconductor field-effect transistors (MOSFETs) with narrow channel widths is highly sensitive to the stress effects of Si channel when related advanced strain engineering is introduced and is compatible with semiconductor processes. In practice, layouts have significant effect on the device performance, especially for the protruding gate width on shallow trench isolation structures. The geometric parameter is investigated by systematically analysing an n-channel MOSFET composed of silicon-carbon (SiC) stressors embedded in the source and drain (S/D) regions and a tensile contact etch stop layer (CESL) using three-dimensional finite element simulation. Tensile CESL (1.1 GPa) and a SiC S/D stressor with a carbon mole fraction of 1.65% are loaded on the structure. The difference in the interactive percentages between the mechanical bending effect of the CESL from the top of the poly gate and the downward force of the CESL adjacent to the spacer sidewall of the gate occurs when the protruding gate width is increased. Results indicate that mobility was highly enhanced by approximately 72.5% at a width of approximately 0.2 μm. The mechanical bending effect becomes dominant when the gate width is more than 0.2 μm. Consequently, the mobility gain decays and consequently converges toward a constant.

Mobility enhancement on nano-strained NMOSFET with epitaxial silicon buffer layers

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Mobility Enhancement Techniques for Ge and GeSn MOSFETs

Body Effect of SiGe and CESL Strained Nano-Node NMOSFETs on (100) Silicon Substrate

Electron Mobility Enhancement Characteristics and Its Temperature Dependence in Strained-Si n-MOSFETs

Performance of Surface Carrier Mobility for Nano-Node Strained (110) MOSFETs with Temperature Effect

High Mobility Strained-Ge Pmosfets with 0.7-Nm Ultrathin EOT Using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks and Strain Modulation

Mos Interface And Channel Engineering For High-Mobility Ge/Iii-V Cmos

High Mobility CMOS Technologies Using III-V/Ge Channels on Si Platform

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

Study of temperature effects of mobility, swing, and early voltages on strained MOSFET devices

Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress

Comparison of NMOSFET and PMOSFET Devices That Combine CESL Stressor and SiGe Channel

Quantifying Hole Mobility Degradation in Pmosfets with a Strained-Si0.7ge0.3 Surface-Channel under an ALD TiN/Al2O3/HfAlOx/Al2O3 Gate Stack

Fabrication of strained Si0.55Ge0.45 channel PMOSFETs directly on a Si substrate