Abstract:High-speed and low-power area-efficient memory solutions are in high demand in today’s smart and internet environment. To program and store data and its associated information, it has grown as a fantastic concept to replace charge in semiconductor devices with electron spin. By further eliminating power dissipation, this leads to the development of “green electronics,” a field of technology that is both energy and chip space efficient. A sort of spintronic device created for potential energy-efficient applications is the magnetic tunnel junction (MTJ) device controlled by spin orbit torques (SOTs). A three-terminal MTJ device with perpendicular to the plane magnetization may operate more quickly and efficiently thanks to the available spin orbit torques (PMTJ). The design of a novel modified non-volatile master slave flip flop (NVMSFF) for register memory array architectures is presented in this study. It is low-power, high-speed, and area-efficient. The NVMSFF design uses a hybrid approach that combines CMOS 45 nm technology with a Verilog-A Model-based SOT-PMTJ circuit that uses spintronics. Additionally, the planned NVMSFF and current NVSFF were used in the design of the 4 × 4 and 8 × 8 memory arrays. The suggested updated NVMSFF was shown to have a lower latency, use less space, and dissipate less power. Additionally, it was discovered that Designed Memory arrays were space and energy efficient.

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