Abstract:With the development of complementary metal-oxide semiconductor (CMOS) technology, the feature size of mental-oxide-semiconductor field-effect-transistor (MOSFET) is continuously shrunk, the short channel effect becomes more and more serious, which makes the static power consumption increase, and now the static power consumption becomes a main source of the power consumption of the integrated circuits. Currently, the performance of CMOS binary logic processor is approaching a bottleneck; therefore the ternary logic becomes a research hotspot to promote the development of high-performance low-power integrated circuits. Compared with binary logic, ternary logic possesses a strong data expression capability, which can not only improve the data density, but also reduce the circuit power consumption and the system complexity. However, using binary devices to build ternary logic circuits requires a large number of components, and even the passive components, which makes it impossible to leverage the advantages of ternary logic. The other method of implementing ternary logic is to utilize innovative two-dimensional materials. This method requires a small number of components and obviates the need for passive components, but it faces the problem that the fabrication process is not mature and cannot be mass-produced. To solve these problems, in this paper by combining the tunneling and the drift diffusion mechanism, we propose a tunneling metal-oxide-semiconductor field-effect transistor (TMOSFET) with three-state characteristics that make it highly suitable for ternary logic design. Compared with other ternary logic schemes, the ternary inverter based on TMOSFET has the same circuit structure as binary inverter, which can simplify the circuit design. In this paper, the operational mechanism of this ternary inverter is studied, and the condition of three-state output of inverter is analyzed. It is found that when the operating voltage VDD and the device turning voltage Vturn satisfy VDD/Vturn approximate to 1.4, the input voltage ranges of the three output states are equivalent. In addition, the influence of TMOSFET transfer characteristic on this ternary inverter is also analyzed. This has certain reference significance for designing and studying ternary logic circuits in future.

Design of Low-Power Dynamic Ternary CMOS D Flip-Flop

High-Performance Current-Mode Logic Ternary D Flip-Flop Based on Bipolar Complementary Metal Oxide Semiconductor

Research on low power technology based on Multi Bit Flip Flop

Design of Adiabatic Timer Based on Three Essential Circuit Elements for Adiabatic Circuits

Design of ternary D-type flip-flop based on clock-gating technique

Low-Voltage and Low-Power True-Single-Phase 16-Transistor Flip-Flop Design

Design of Low-Power D-flip-flop Based on Multithreshold Technique

Low Clock Swing D Flip-Flops Design by Using Output Control and MTCMOS

Design of Low Power Multivalued Double-Edge-triggered Flip-Flop

Design of High-Performance CML Ternary D Flip-Flop Based on BiCMOS

Dynamic Current Mode Logic Based Flip-Flop Design for Robust and Low-Power Security Integrated Circuits

Low-Power, High-Performance and Low Clock Swing D Flip-Flops with Single Power Supply

Design of ternary pulsed JKL flip-flops

Design of CMOS low-power pre-settable edge-triggered flip-flop based on multithreshold technique.

A Novel TMOSFET Ternary Inverter Based on Hybrid Conduction Mechanism

A Low Clock Swing, Power Saving and Generic Technology Based D Flip-Flop with Single Power Supply

Design of A Low-Power Pulse-Triggered Flip-Flop with Conditional Clock Technique

Design an energy efficient pulse triggered ternary flip flops with Pseudo NCFET logic

Design of High-Speed Quaternary D Flip-Flop Based on Multiple-valued Current-mode

LOW CLOCK-SWING TSPC FLIP-FLOPS FOR LOW-POWER APPLICATIONS

Power-efficient Dual-Edge Implicit Pulse-Triggered Flip-Flop with an Embedded Clock-Gating Scheme.