Abstract:The advantages of the properties of GaN over traditional III-V materials are discussed for applications in terahertz (THz) regime. Consequently the GaN-based devices which include electronics and photonics devices are investigated with emphases on the theoretical and practical developments of Quantum Cascade Lasers, Plasma Wave FETs and Negative Differential Resistance diodes. The results demonstrate that GaN is a promising material for THz semiconductor devices with an excellent performance in operating temperature, frequency and output power. It is found that the dislocations in GaN crystal seriously impact on the performance of THz devices. It is also shown that a great progress of MOCVD technique gives the potential in GaN epitaxial growth for THz applications. Finally, our recent jobs in GaN fabrication are revealed to demonstrate the further researches in THz regime. I. Introduction Terahertz (THz) regime, roughly corresponding to the frequencies from 100 GHz to 10 THz (3 mm to 30 μm), has attracted many attentions in the last decade because of its promising applications in medical, biological and industrial imaging, broadband and safety communication, radar, space science, etc. The so called "terahertz gap" implies that a big challenge still occurs for THz technology since it is in the margin of electronics and photonics technologies. There have existed two technology roadmaps for THz semiconductor devices. From low side of THz frequency, the electronics-based devices such as Gunn diode, impact avalanche transit time (IMPATT) diode, resonant tunneling diode which are based on negative differential resistance (NDR), and the nanometer field effective transistors (FET) based on plasma wave, are widely investigated for THz frequencies. From high side, the photonics-based devices such as quantum cascade laser (QCL) extend the emission wavelengths from mid- and far-infrared to THz spectral range. All the efforts are to pursue the effective radiation and detection of terahertz signals. This is due to the fact that the radiation power and the detection sensitivity of THz devices are extremely low compared with the millimeter wave devices and optoelectronic devices (1).

Terahertz Performance of A Gan-Based Planar Nanochannel Device

Plasma-Wave Enhanced THz-Performance of a Nanometer Side-Gated Transistor

THz Oscillations in a GaN Based Planar Nano-Device

Modulation of Multidomain in AlGaN/GaN HEMT-Like Planar Gunn Diode

GaN-based Semiconductor Devices for Terahertz Technology

Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies

Material and Process Considerations for Terahertz Planar Nanodevices

Study of THz Oscillations in GaN-Based Planar Nanodevices

Planar Terahertz Nanodevices

A Terahertz Detector Based on Algan/Gan High Electron Mobility Transistor with Bowtie Antennas

Terahertz oscillation in GaN HEMT-like BEAN diode with a composite contact

Plasmonic Terahertz Modulator Based on a Grating-Coupled Two-Dimensional Electron System

Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

Influence of Electric Field Coupling Model on the Simulated Performances of A Gan Based Planar Nanodevice

TCAD Simulation for Nonresonant Terahertz Detector Based on Double-Channel GaN/AlGaN High-Electron-Mobility Transistor

Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier

THz Generation Based on Gunn Oscillations in GaN Planar Asymmetric Nanodiodes

A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor

A High-Performance Terahertz Detector Based on a Graded Channel GaN High-Electron-mobility Transistor with a Recessed Gate

Broadband terahertz radiation from a biased two-dimensional electron gas in an AlGaN/GaN heterostructure

A Theoretical Study of Harmonic Generation in A Short Period Algan/Gan Superlattice Induced by A Terahertz Field