Photo-Ionisation Spectra of Single Erbium Centres by Charge Sensing with A Nano Transistor

C. M. Yin,M. Rancic,N. Stavrias,G. G. de Boo,J. C. McCallum,M. J. Sellars,S. Rogge
DOI: https://doi.org/10.1109/commad.2012.6472428
2012-01-01
Abstract:We show the photo-ionisation of an individual erbium centre in silicon. A single-electron transistor is used as a charge detector to observe the resonant ionization as a function of photon energy. This allows for optical addressing and electrical detection of individual erbium centres with exceptionally narrow line width.
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