Abstract:In this paper, a novel Si interposer for hermetical MEMS oriented System-in-Package application is presented and it is a low stress, scalable platform with a stress releasing function. It's composed of Si posts which are Air-gapped from Si interposer substituting traditional Copper TSVs to function as electrical interconnection paths, re-distribution layer (RDL) and landing pads for chip stacking. Because there's no Coefficient of Thermal Expansion (CTE) mismatch between Air-gapped Si posts with Si substrate and it suffers little thermal stress when it's subjecting to thermal impacts. Furthermore, Air-gapped Si post is able to act not only as a conducting path but also as a free supporting post for chips' mounting on. So, it's able to release stress accumulation between Si interposer and stacking chips and make little influence to the stacking chips with its elastic deformation. With regard to MEMS hermetical SIP based on the proposed Si interposer, challenging issues are identified and addressed and verified with experimental results. Air-gapped Si sample is fabricated and wafer to wafer bonding process with patterned BCB layer is developed for achieving hermetical wafer level package. The stress condition is analyzed by combining the micro-infrared photoelastic imaging results and finite element simulation results. The measured leakage rate of air-gapped Si sample is 10E-10mbar.L/s. These experimental results prove the technical merits and feasibility of the proposed Si interposer application to hermetical MEMS SIP application. © 2016 IEEE.

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