Nanoscale patterned sapphire substrates with cortexlike nanostructures for GaN-based LEDs

Yu-Sheng Lin,Yeh, J.A.

DOI: https://doi.org/10.1109/OMEMS.2011.6031092

2011-01-01

Abstract:A new morphology of nanopatterned sapphire substrates (NPSS) was presented, which applied in LEDs exhibited an output power of 33.1 mW, higher than that on flat substrates 2.4-fold, owing to void-embedded NPSS with cortexlike nanostructures.

What problem does this paper attempt to address?

Gan-Based Light-Emitting Diodes Grown on Nanoscale Patterned Sapphire Substrates with Void-Embedded Cortex-Like Nanostructures

Yu-Sheng Lin,J. Andrew Yeh

DOI: https://doi.org/10.1143/apex.4.092103

IF: 2.819

2011-01-01

Applied Physics Express

Abstract:High-efficiency GaN-based light-emitting diodes (LEDs) with an emitting wavelength of 438 nm were demonstrated utilizing nanoscale patterned sapphire substrates with void-embedded cortex-like nanostructures (NPSS-VECN). Unlike the previous nanopatterned sapphire substrates, the presented substrate has a new morphology that can not only improve the crystalline quality of GaN epilayers but also generate a void-embedded nanostructural layer to enhance light extraction. Under a driving current of 20 mA, the external quantum efficiency of an LED with NPSS-VECN is enhanced by 2.4-fold compared with that of the conventional LED. Moreover, the output powers of two devices respectively are 33.1 and 13.9 mW.
Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching

Chong Geng,Qingfeng Yan,Peng Dong,Liang Shan,Chengxiao Du,Tongbo Wei,Zhibiao Hao

DOI: https://doi.org/10.1116/1.4916687

2015-05-01

Abstract:The authors present a facile approach to the fabrication of nanopatterned sapphire substrates (NPSS) with concave pyramid structure by a wet etching method. The silica wet-etching mask on the sapphire substrate was prepared by using a colloidal monolayer templating strategy. NPSS with two different periods were prepared by employing 660 and 900 nm polystyrene colloidal spheres. Light emitting diode (LED) structure was epitaxially grown on the NPSS by the metal-organic chemical vapor deposition method. Both structural and optoelectronic properties of LEDs grown on flat sapphire substrate and NPSS were demonstrated and compared in detail. The calculations based on x-ray rocking curves revealed that the threading dislocation densities (TDDs) were decreased and the crystalline quality of epitaxial GaN film was improved when NPSS was used. Furthermore, the decrease in the edge TDDs was more prominent than that in the screw TDDs, which could be explained by the dislocation annihilation mechanism. The LEDs grown on 660- and 900-nm-NPSS exhibited 48% and 56% enhancement in light output power compared to that of a conventional LED on a flat sapphire substrate, arising from the nanoscale patterns in the sapphire which allowed more light to reflect from sapphire substrate onto the top direction.

engineering, electrical & electronic,nanoscience & nanotechnology,physics, applied
Fabrication of Nano-Patterned Sapphire Substrates and Their Application to the Improvement of the Performance of GaN-based LEDs

Haiyong Gao,Fawang Yan,Yang Zhang,Jinmin Li,Yiping Zeng,Guohong Wang

DOI: https://doi.org/10.1088/0022-3727/41/11/115106

2008-01-01

Journal of Physics D Applied Physics

Abstract:Nano-patterned sapphire substrates (NPSSs) were fabricated by a chemical wet etching technology using nano-sized SiO(2) as masks. The NPSS was applied to improve the performance of GaN-based light emitting diodes (LEDs). GaN-based LEDs on NPSSs were grown by metal organic chemical vapour deposition. The characteristics of LEDs grown on NPSSs and conventional planar sapphire substrates were studied. The light output powers of the LEDs fabricated on NPSSs were considerably enhanced compared with that of the conventional LEDs grown on planar sapphire substrates.
The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

Yonghui Zhang,Tongbo Wei,Junxi Wang,Ding Lan,Yu Chen,Qiang Hu,Hongxi Lu,Jinmin Li

DOI: https://doi.org/10.1063/1.4867091

IF: 1.697

2014-02-01

AIP Advances

Abstract:Self-assembly SiO2 nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, the external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
High-efficiency GaN-based Blue LEDs Grown on Nano-Patterned Sapphire Substrates for Solid-State Lighting

Fawang Yan,Haiyong Gao,Yang Zhang,Jinmin Li,Yiping Zeng,Guohong Wang,Fuhua Yang

DOI: https://doi.org/10.1117/12.755420

2007-01-01

Abstract:Nano-patterning sapphire substrates technique has been developed for nitrides light-emitting diodes (LEDs) growths. It is expected that the strain induced by the lattice misfits between the GaN epilayers and the sapphire substrates can be effectively accommodated via the nano-trenches. The GaN epilayers grown on the nano-patterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (MOCVD) are characterized by means of scanning electron microscopy (SEM), high-resolution x-ray diffraction (HRXRD) and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about 46% increment in device performance is measured for the InGaN/GaN blue LEDs grown on the nano-patterned sapphire substrates.
Design of patterned sapphire substrates for GaN-based light-emitting diodes

Hai-Yan Wang,Zhi-Ting Lin,Jing-Lei Han,Li-Yi Zhong,Guo-Qiang Li

DOI: https://doi.org/10.1088/1674-1056/24/6/067103

2015-06-01

Chinese Physics B

Abstract:A new method for patterned sapphire substrate (PSS) design is developed and proven to be reliable and cost-effective. As progress is made with LEDs’ luminous efficiency, the pattern units of PSS become more complicated, and the effect of complicated geometrical features is almost impossible to study systematically by experiments only. By employing our new method, the influence of pattern parameters can be systematically studied, and various novel patterns are designed and optimized within a reasonable time span, with great improvement in LEDs’ light extraction efficiency (LEE). Clearly, PSS pattern design with such a method deserves particular attention. We foresee that GaN-based LEDs on these newly designed PSSs will achieve more progress in the coming years.

physics, multidisciplinary
Porous Light-Emitting Diodes With Patterned Sapphire Substrates Realized by High-Voltage Self-Growth and Soft UV Nanoimprint Processes

Tang-You Sun,Wen-Ning Zhao,Xing-Hui Wu,Si-Si Liu,Zhi-Chao Ma,Jing Peng,Jian He,Hai-Feng Xu,Shi-Yuan Liu,Zhi-Mou Xu

DOI: https://doi.org/10.1109/JLT.2013.2293142

IF: 4.7

2014-01-01

Journal of Lightwave Technology

Abstract:Nanostructured GaN-based light-emitting diode (LED), with its high performance on light extraction efficiency, has attracted significant attention for the potential application in solid state lighting. However, patterning structures at nanoscale feature size with large area and low cost is of great importance and hardness. In this paper, a 2 inch anodic aluminum oxide (AAO) template was used as th...
Research progress in the preparation of patterened sapphire substrates for high-efficiency and high-power GaN-based LEDs

GUI Quan-hong,ZHOU Fu-qiang,WANG Gui-gen,CUI Lin,LI Ling-hua,YAN Shuai,HAN Jie-cai

2012-01-01

Abstract:Patterned substrate sapphire has attracted much interest in recent years due to its outstanding properties in improve GaN epitaxial crystal quality and light output powers of the LEDs. The fabrication methods of patterned substrate sapphire are reviewed, including dry etch, wet etch and epitaxial growth method. The relationship between the mechanism of improve epitaxial crystal quality and morphology of the patterned substrate sapphire (grooves, micron hole, micron columnar, micron hemispherical, nano-hole and nano-columnar) is also discussed.
Research progress of Patterned Sapphire Substrate for GaN-Based Light-Emitting Diodes

Zhou Shizhong,Lin Zhiting,Wang Haiyan,Li Guoqiang

DOI: https://doi.org/10.3969/j.issn.1003-353x.2012.06.002

2012-01-01

Abstract:Nowadays,the patterned sapphire substrate technology is used as a fundamental technology to overcome the material stress that the results from a combination of lattice mismatch and thermal expansion coefficient mismatch,and achieves high efficiency light emitting diodes(LED).This article briefly reviews recent development of patterned sapphire substrate for GaN-based LEDs.It starts with an introduction to the epitaxial growth of GaN on sapphire substrate and a number of new technologies to create LEDs with enhanced performance.The influences of uniformed shaped pattern,nano sized pattern and the pattern fabricating method,i.e.dry-or wet-etching methods on the light extraction efficiency of LEDs are presented.It is demonstrated that a combination of patterned substrate with other technologies is able to improve the performance of LEDs.The future directions in this area,like the possibility of appliance to large-size chips,design and optimization of nano-scale patterns,as well as to combine optical simulations,are mentioned.
Parameters optimization of nanopatterned sapphire substrates for enhancing light extraction efficiency of GaN-based LEDs

Pengcheng Zhang,Qiuling Wen,Xipeng Xu

DOI: https://doi.org/10.1016/j.optcom.2020.125548

IF: 2.4

2020-06-01

Optics Communications

Abstract:The nanopatterned structures play an important role in enhancing the light extraction efficiency (LEE) of GaN-based light-emitting diodes (LEDs). Three-dimensional finite-difference time-domain (3D-FDTD) method was carried out to calculate the LEE enhancement of GaN-based LEDs designed on periodic nanostructures with different geometries. Orthogonal experiment method was employed to obtain the optimal structure parameters and analyze the weighting factor of critical parameters affecting the LEE enhancement. The results of orthogonal experiment showed that the height/depth of the periodic nanostructures is the dominated factor to influence the LEE enhancement, followed by the diameter and the spacing of the periodic nanostructures. It was also found that the far-field intensities of LEDs with periodic convex nanostructures were stronger than those with periodic concave nanostructures. The critical parameters of periodic convex nanostructures were further optimized by single factor method, and their optimal parameters were obtained. The optimal LEE enhancement of GaN-based LEDs grown on cone-shaped nanopillar and column-shaped nanopillar array patterned sapphire substrates are 1.95 and 1.97, respectively. This means the cone-shaped and column-shaped nanopillar structures have almost identical LEE enhancement of GaN-based LEDs.

optics
InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate

Wen-Cheng Ke,Fang-Wei Lee,Chih-Yung Chiang,Zhong-Yi Liang,Wei-Kuo Chen,Tae-Yeon Seong

DOI: https://doi.org/10.1021/acsami.6b10226

2016-12-21

Abstract:A hybrid patterned sapphire substrate (hybrid-PSS) was prepared using an anodic aluminum oxide etching mask to transfer nanopatterns onto a conventional patterned sapphire substrate with microscale patterns (bare-PSS). The threading dislocation (TD) suppression of light-emitting diodes (LEDs) grown on a hybrid-PSS (HP-LED) exhibits a smaller reverse leakage current compared with that of LEDs grown on a bare-PSS (BP-LED). The strain-free GaN buffer layer and fully strained InGaN active layer were evidenced by cross-sectional Raman spectra and reciprocal space mapping of the X-ray diffraction intensity for both samples. The calculated piezoelectric fields for both samples are close, implying that the quantum-confined Stark effect was not a dominant mechanism influencing the electroluminescence (EL) peak wavelength under a high injection current. The bandgap shrinkage effect of the InGaN well layer was considered to explain the large red-shifted EL peak wavelength under high injection currents. The estimated LED chip temperatures rise from room temperature to 150 °C and 75 °C for BP-LED and HP-LED, respectively, at a 600-mA injection current. This smaller temperature rise of the LED chip is attributed to the increased contact area between the sapphire and the LED structural layer because of the embedded nanopattern. Although the chip generates more heat at high injection currents, the accumulated heat can be removed to outside the chip effectively. The high diffuse reflection (DR) rate of hybrid-PSS increases the escape probability of photons, resulting in an increase in the viewing angle of the LEDs from 130° to 145°. The efficiency droop was reduced from 46% to 35%, effects which can be attributed to the elimination of TDs and strain relaxation by embedded nanopatterns. In addition, the light output power of HP-LED at 360-mA injection currents exhibits a ∼ 22.3% enhancement, demonstrating that hybrid-PSSs are beneficial to apply in high-power LEDs.
Improved Light Extraction Efficiency of GaN-based LEDs with Patterned Sapphire Substrate and Patterned ITO

Shengjun Zhou,Bin Cao,Sheng Liu,Han Ding

DOI: https://doi.org/10.1016/j.optlastec.2012.02.008

2012-01-01

Abstract:To improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs), periodic semisphere patterns with 3.5μm width, 1.2μm height, and 0.8μm spacing were formed on sapphire substrate by dry etching using BCl3/Cl2 gas chemistry. The indium tin oxide (ITO) transparent conductive layer was patterned by wet etching to reduce the total internal reflection existing along between p-GaN, ITO, and air. At 350mA injection current, the high power LED by integrating patterned sapphire substrate with patterned ITO technology exhibited a 36.9% higher light output power than the conventional LEDs.
Optical and Electrical Properties of Gan-Based Light Emitting Diodes Grown on Micro and Nano-Scale Patterned Si Substrate

Ching-Hsueh Chiu,Chien-Chung Lin,Dong-Mei Deng,Da-Wei Lin,Jin-Chai Li,Zhen-Yu Li,Gia-Wei Shu,Tien-Chang Lu,Ji-Lin Shen,Hao-Chung Kuo,Kei-May Lau

DOI: https://doi.org/10.1117/12.893047

2011-01-01

Abstract:We investigate the optical and electrical characteristics of the GaN-based light emitting diodes (LEDs) grown on micro- and nano-scale patterned silicon substrate (MPLEDs and NPLEDs). The transmission electron microscopy images reveal the suppression of threading dislocation density in InGaN/GaN structure on nano-pattern substrate due to nano-scale epitaxial lateral overgrowth. The plan-view and cross-section cathodoluminescence mappings show less defective and more homogeneous active quantum-well region growth on nano-porous substrates. From temperature-dependent photoluminescence (PL) and low temperature time-resolved PL measurement, NPLEDs have better carrier confinement and higher radiative recombination rate than MPLEDs. In terms of device performance, NPLEDs exhibit smaller electroluminescence peak wavelength blue shift, lower reverse leakage current and decrease in efficiency droop when compared with the MPLEDs. These results suggest the feasibility of using NPSi for the growth of high quality and power LEDs on Si substrates.
282-Nm Algan-Based Deep Ultraviolet Light-Emitting Diodes with Improved Performance on Nano-Patterned Sapphire Substrates

Peng Dong,Jianchang Yan,Junxi Wang,Yun Zhang,Chong Geng,Tongbo Wei,Peipei Cong,Yiyun Zhang,Jianping Zeng,Yingdong Tian,Lili Sun,Qingfeng Yan,Jinmin Li,Shunfei Fan,Zhixin Qin

DOI: https://doi.org/10.1063/1.4812237

IF: 4

2013-01-01

Applied Physics Letters

Abstract:We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 μm due to AlN's nano-scaled lateral growth, which also leads to low dislocation densities in AlN and epi-layers above. On NPSS, the light-output power of a 282-nm UV-LED reaches 3.03 mW at 20 mA with external quantum efficiency of 3.45%, exhibiting 98% better performance than that on flat sapphire. Temperature-dependent photoluminescence reveals this significant enhancement to be a combination of higher internal quantum efficiency and higher light extraction efficiency.
Design of Wide-Bottomed Patterned Sapphire Substrates for Performance Improvement of Gan-Based Light-Emitting Diodes

Shizhong Zhou,Haiyan Wang,Zhiting Lin,Liyi Zhong,Yunhao Lin,Wenliang Wang,Weijia Yang,Xiaosong Hong,Guoqiang Li

DOI: https://doi.org/10.1149/2.0041411jss

IF: 2.2

2014-01-01

ECS Journal of Solid State Science and Technology

Abstract:We propose patterned sapphire substrates (PSSs) with wide-bottomed cone-shaped patterns to enhance the light extraction efficiency of GaN-based light-emitting diodes (LEDs). Simulation reveals that PSS with wide-bottomed cone-shaped patterns is of higher yield in LED light extraction efficiency. The subsequent fabrication of and epitaxial growth of LED structure on the proposed wide-bottomed PSS verify the simulation results experimentally. It is demonstrated that wide-bottomed patterns with narrow distance between patterns can effectively release stress, avoid the decline in crystal quality and improve light extraction efficiency. By comparison with the popular commercially available PSS, LED grown on the proposed PSS whose wide-bottomed patterns are of 3.91 mu m in width, 2.37 mu m in height and 0.09 mu m in distance is proven to be of as high as 16.7% improvement in luminous efficacy and 33.8% drop in dislocation density, which shows the promising future for its application in the highly efficient LEDs. (C) 2014 The Electrochemical Society. All rights reserved.
Fabrication of Wafer-Scale Nanopatterned Sapphire Substrate by Hybrid Nanoimprint Lithography

Xu Guo,Jing Hu,Zhe Zhuang,Mengmeng Deng,Feixiang Wu,Xie Li,Bin Liu,Changsheng Yuan,Haixiong Ge,Feng Li,Yanfeng Chen

DOI: https://doi.org/10.1116/1.4898778

2014-01-01

Abstract:A hybrid nanoimprint soft lithography (HNSL) technique was used to fabricate nanopatterned sapphire substrates (NPSSs) for light-emitting diodes (LEDs). HNSL combines the high resolution of nanoimprint lithography (NIL) and the conformal contact of soft lithography. The key component of HNSL is the hybrid mold, which consists of rigid nanopatterns with an anti-adhesion coating on an elastic poly(dimethylsiloxane) support. The mold was used to fabricate nanopatterns on a 2-in. sapphire substrate through a soft UV-NIL system with a double-layer resist, a top UV-curable layer, and an underlying PMMA layer. Nickel dot arrays were formed from the imprinted patterns through a lift-off process and used as the etching mask during the sapphire etching process due to nickel's high etching resistance. A wafer-scale circular-truncated-cone shaped NPSS was achieved by chlorine-based inductively coupled plasma etching. Typical blue LEDs with emission wavelengths of 452 nm were grown by metal-organic chemical vapor deposition on the NPSS and a flat sapphire substrate (FSS), respectively. The integral electroluminescence intensity and light output power of the NPSS LED were enhanced by 57.9% and 43.8%, respectively, compared to the FSS LED. The high uniformity in photoluminescence intensity across the entire NPSS LED wafer indicated good uniformity of nanopatterns fabricated by HNSL. Low cost and availability of the process and the ability to fabricate at the wafer scale make HNSL a promising method for production of NPSSs.
Enhanced External Quantum Efficiency of Light Emitting Diodes by Fabricating Two-Dimensional Photonic Crystal Sapphire Substrate with Holographic Technique

Lin Han,Liu Shou,Zhang Xiang-Su,Liu Bao-Lin,Ren Xue-Chang

DOI: https://doi.org/10.7498/aps.58.959

IF: 0.906

2009-01-01

Acta Physica Sinica

Abstract:Investigation in fabricating two-dimensional (2D) photonic crystal (PC) on sapphire substrates for enhancing external efficiency of GaN based light emitting diodes (LEDs) is presented. 2D-PC was fabricated on a sapphire substrate using holographic lithography and inductively coupled plasma (ICP) dry etching. LEDs with 2μm thick n -GaN layer，four pairs of InGaN/GaN quantum well structures and 200nm thick p -GaN layer were grown on the patterned sapphire substrate (PSS) by metal organic chemical vapor deposition (MOCVD). The PC fabricated on PSS has 2D hexagonal lattice pattern，with 3.8μm lattice constant and 800nm depth. LED output measurement shows 100% increase in the average luminous intensity of PSS-LEDs compared with that of conventioanl LEDs. The measured X-ray rocking curves of (0002) diffraction for GaN layers grown on patterned and non-patterned sapphire substrates indicate that the quality of GaN crystal grown on PSS is not improved，which implies that the large enhancement of external quantum efficiency of PSS-LED is not caused by the increase in internal efficiency but possibly by the increase in extraction efficiency，which results from the scattering of the PSS.
Nanoimprinted patterned sapphire with silica array for efficient InGaN-based green mini-LEDs

Guoyi Tao,Siyuan Cui,Yuechang Sun,Ke Sun,Qianxi Zhou,Shengjun Zhou

DOI: https://doi.org/10.1364/OL.499074

2023-08-15

Abstract:Here, we propose nanoimprinted patterned sapphire with a silica array (PSSA) with the aim to promote the efficiency of InGaN-based green (∼520 nm) mini-LEDs. According to x-ray diffraction measurements, the threading dislocation density of GaN epitaxial layers grown on nanoimprinted PSSA demonstrates a pronounced reduction compared with the epilayers on the conventional patterned sapphire substrate (PSS). Consequently, a mini-LED on PSSA exhibits a significantly boosted light output power (LOP) in comparison to a mini-LED on PSS. At 10 mA, the LOP of the mini-LED on PSS is 6.0 mW, and this is further improved to 6.8 mW for the mini-LED on PSSA. Moreover, the peak external quantum efficiencies of the mini-LEDs on PSS and PSSA are 41% and 47%, respectively. A three-dimensional (3D) finite-difference time-domain simulation demonstrates that the PSSA contributes enhanced light extraction for photons emitted from the active region. It is also highly feasible to use this nanoimprinted PSSA technology in red and blue mini-LEDs for the realization of full-color displays.
Progress in Preparation of Patterned Sapphire Substrate for GaN-based Light Emitting Diodes

Cui Lin,Wang Gui-Gen,Zhang Hua-Yu,Zhou Fu-Qiang,Han Jie-Cai

DOI: https://doi.org/10.3724/sp.j.1077.2012.11785

IF: 1.292

2012-01-01

Journal of Inorganic Materials

Abstract:GaN-based light emitting diodes are extensively used for light emitting diodes in the green to ultraviolet (UV) wavelength region and have already been widely used in traffic signals, outdoor displays, full-color displays and back lighting in liquid-crystal displays. Although GaN-based light emitting diodes are commercially available, it is still difficult to manufacture highly efficient GaN-based light emitting diodes due to the high dislocation density and the low light extraction efficiency. Patterned sapphire substrates for GaN-based light-emitting diodes have attracted much interest in recent years because it can not only reduce the threading dislocation density of epitaxial GaN films, but also improve the light extraction efficiency of GaN-based light-emitting diodes. A comprehensive review is presented on the mechanisms responding for performance enhancement of GaN-based light emitting diodes on patterned sapphire substrates, methods of preparing patterned sapphire substrates and pattern-size of patterned sapphire substrates. What is more, improved performance of GaN-based light-emitting diodes on patterned sapphire substrates prepared by different methods and pattern-size are further discussed in detail. In view of the existing problems, the prospects for future development of patterned sapphire substrates are also proposed.
Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer

shengjun zhou,shu yuan,yingce liu,l jay guo,sheng liu,han ding

DOI: https://doi.org/10.1016/j.apsusc.2015.07.194

IF: 6.7

2015-01-01

Applied Surface Science

Abstract:We demonstrated that the improvement in optical and electrical performance of high power LEDs was achieved using cone-shaped patterned sapphire substrate (PSS) and strip-shaped SiO2 distributed current blocking layer (DCBL). We found through transmission electron microscopy (TEM) observation that densities of both the screw dislocation and edge dislocation existing in GaN epitaxial layer grown on PSS were much less than that of GaN epitaxial layer grown on flat sapphire substrate (FSS). Compared to LED grown on FSS, LED grown on PSS showed higher sub-threshold forward-bias voltage and lower reverse leakage current, resulting in an enhancement in device reliability. We also designed a strip-shaped SiO2 DCBL beneath a strip-shaped p-electrode, which prevents the current from being concentrated on regions immediately adjacent the strip-shaped p-electrode, thereby facilitating uniform current spreading into the active region. By implementing strip-shaped SiO2 DCBL, light output power of high power PSS-LED chip could be further increased by 13%. (C) 2015 Elsevier B.V. All rights reserved.

Nanoscale patterned sapphire substrates with cortexlike nanostructures for GaN-based LEDs

Gan-Based Light-Emitting Diodes Grown on Nanoscale Patterned Sapphire Substrates with Void-Embedded Cortex-Like Nanostructures

Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching

Fabrication of Nano-Patterned Sapphire Substrates and Their Application to the Improvement of the Performance of GaN-based LEDs

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

High-efficiency GaN-based Blue LEDs Grown on Nano-Patterned Sapphire Substrates for Solid-State Lighting

Design of patterned sapphire substrates for GaN-based light-emitting diodes

Porous Light-Emitting Diodes With Patterned Sapphire Substrates Realized by High-Voltage Self-Growth and Soft UV Nanoimprint Processes

Research progress in the preparation of patterened sapphire substrates for high-efficiency and high-power GaN-based LEDs

Research progress of Patterned Sapphire Substrate for GaN-Based Light-Emitting Diodes

Parameters optimization of nanopatterned sapphire substrates for enhancing light extraction efficiency of GaN-based LEDs

InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate

Improved Light Extraction Efficiency of GaN-based LEDs with Patterned Sapphire Substrate and Patterned ITO

Optical and Electrical Properties of Gan-Based Light Emitting Diodes Grown on Micro and Nano-Scale Patterned Si Substrate

282-Nm Algan-Based Deep Ultraviolet Light-Emitting Diodes with Improved Performance on Nano-Patterned Sapphire Substrates

Design of Wide-Bottomed Patterned Sapphire Substrates for Performance Improvement of Gan-Based Light-Emitting Diodes

Fabrication of Wafer-Scale Nanopatterned Sapphire Substrate by Hybrid Nanoimprint Lithography

Enhanced External Quantum Efficiency of Light Emitting Diodes by Fabricating Two-Dimensional Photonic Crystal Sapphire Substrate with Holographic Technique

Nanoimprinted patterned sapphire with silica array for efficient InGaN-based green mini-LEDs

Progress in Preparation of Patterned Sapphire Substrate for GaN-based Light Emitting Diodes

Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer