Abstract:A hybrid patterned sapphire substrate (hybrid-PSS) was prepared using an anodic aluminum oxide etching mask to transfer nanopatterns onto a conventional patterned sapphire substrate with microscale patterns (bare-PSS). The threading dislocation (TD) suppression of light-emitting diodes (LEDs) grown on a hybrid-PSS (HP-LED) exhibits a smaller reverse leakage current compared with that of LEDs grown on a bare-PSS (BP-LED). The strain-free GaN buffer layer and fully strained InGaN active layer were evidenced by cross-sectional Raman spectra and reciprocal space mapping of the X-ray diffraction intensity for both samples. The calculated piezoelectric fields for both samples are close, implying that the quantum-confined Stark effect was not a dominant mechanism influencing the electroluminescence (EL) peak wavelength under a high injection current. The bandgap shrinkage effect of the InGaN well layer was considered to explain the large red-shifted EL peak wavelength under high injection currents. The estimated LED chip temperatures rise from room temperature to 150 °C and 75 °C for BP-LED and HP-LED, respectively, at a 600-mA injection current. This smaller temperature rise of the LED chip is attributed to the increased contact area between the sapphire and the LED structural layer because of the embedded nanopattern. Although the chip generates more heat at high injection currents, the accumulated heat can be removed to outside the chip effectively. The high diffuse reflection (DR) rate of hybrid-PSS increases the escape probability of photons, resulting in an increase in the viewing angle of the LEDs from 130° to 145°. The efficiency droop was reduced from 46% to 35%, effects which can be attributed to the elimination of TDs and strain relaxation by embedded nanopatterns. In addition, the light output power of HP-LED at 360-mA injection currents exhibits a ∼ 22.3% enhancement, demonstrating that hybrid-PSSs are beneficial to apply in high-power LEDs.

High-efficiency GaN-based Blue LEDs Grown on Nano-Patterned Sapphire Substrates for Solid-State Lighting

Fabrication of Nano-Patterned Sapphire Substrates and Their Application to the Improvement of the Performance of GaN-based LEDs

Gan-Based Light-Emitting Diodes Grown on Nanoscale Patterned Sapphire Substrates with Void-Embedded Cortex-Like Nanostructures

Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching

High‐Brightness Blue Light‐Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer

Growth of III-Nitride Materials and Blue Light-Emitting Diodes by Metal Organic Vapor Phase Epitaxy

Research progress of Patterned Sapphire Substrate for GaN-Based Light-Emitting Diodes

Porous Light-Emitting Diodes With Patterned Sapphire Substrates Realized by High-Voltage Self-Growth and Soft UV Nanoimprint Processes

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates

High-output power GaN-LED based on surface plasmon enhancement

GaN Films Deposited on Sapphire Substrates Sputter-Coated with AlN Followed by Monolayer Graphene for Solid-State Lighting

High-Brightness GaN-Based Blue Light-Emitting Diodes Using AlON Buffer Layer on 4 In.-Patterned Sapphire Substrate: Low-Dislocation-Defect Epitaxy, Growth Mechanisms, and Higher Device Performance

282-Nm Algan-Based Deep Ultraviolet Light-Emitting Diodes with Improved Performance on Nano-Patterned Sapphire Substrates

Research progress in the preparation of patterened sapphire substrates for high-efficiency and high-power GaN-based LEDs

Nanoscale patterned sapphire substrates with cortexlike nanostructures for GaN-based LEDs

Pattern Design of and Epitaxial Growth on Patterned Sapphire Substrates for Highly Efficient Gan-Based Leds

Improved Light Extraction Efficiency of GaN-based LEDs with Patterned Sapphire Substrate and Patterned ITO

GaN-Based LEDs Grown on Graphene-Covered SiO2/Si (100) Substrate

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency