Abstract:In this paper, it is demonstrated that the AlGaN high electron mobility transistor (HEMT) based on silicon wafer exhibits excellent high-temperature performance. First, the output characteristics show that the ratio of on-resistance (RON) only reaches 1.55 when the working temperature increases from 25 °C to 150 °C. This increase in RON is caused by a reduction in optical phonon scattering-limited mobility (μOP) in the AlGaN material. Moreover, the device also displays great high-performance stability in that the variation of the threshold voltage (ΔVTH) is only 0.1 V, and the off-state leakage current (ID,off-state) is simply increased from 2.87 × 10−5 to 1.85 × 10−4 mA/mm, under the operating temperature variation from 25 °C to 200 °C. It is found that the two trap states are induced at high temperatures, and the trap state densities (DT) of 4.09 × 1012~5.95 × 1012 and 7.58 × 1012~1.53 × 1013 cm−2 eV−1 are located at ET in a range of 0.46~0.48 eV and 0.57~0.61 eV, respectively, which lead to the slight performance degeneration of AlGaN HEMT. Therefore, this work provides experimental and theoretical evidence of AlGaN HEMT for high-temperature applications, pushing the development of ultra-wide gap semiconductors greatly.

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Investigation of Device Geometry- and Temperature-Dependent Characteristics of Algan/Gan Lateral Field-Effect Rectifier

Suppressing Temperature Rise in AlGaN/GaN HEMT with Graphene Layers

Characterization and Analysis of the Temperature-Dependent On-Resistance in Algan/Gan Lateral Field-Effect Rectifiers

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High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate

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Investigation on the Device Geometry-Dependent Reverse Recovery Characteristic of AlGaN/GaN Lateral Field-Effect Rectifier (L-FER)

Temperature Dependence and Thermal Stability of Planar-Integrated Enhancement/Depletion-Mode Algan/Gan Hemts and Digital Circuits

High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits

The degradation mechanism of high power S-band AlGaN/GaN HEMTs under high temperature

Improved High-Temperature Device Transport Properties and Off-State Characteristics of Algan/Gan Power Devices with Atomic Layer Deposition (ald) Hfalo High-K Dielectric

Monolithic Integration of Lateral Field-Effect Rectifier with Normally-off HEMT for GaN-on-Si Switch-Mode Power Supply Converters

Boosted High-Temperature Electrical Characteristics of AlGaN/GaN HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barriers

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

A Novel Controllable Hybrid-Anode Algan/Gan Field-Effect Rectifier with Low Operation Voltage

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A Temperature Analysis of High-power AlGaN/GaN HEMTs

Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode