Abstract:A high-voltage normally-off GaN vertical FinFET with a compatible integrated Fin Diode (FD-FinFET) is proposed to improve reverse conduction performance. The Fin channel combined with the ohmic contact source covering the Fin sidewalls forms the Metal-Insulator- Semiconductor (MIS) structure to control the conduction/blocking characteristics of the FD. In the reverse conduction (VDS < 0 V), the FD easily turns on by the narrowing depletion region of the MIS and thus significantly reduces the turn-on voltage (VRT). With the increasing VSD, electron accumulation layers are formed along the Fin sidewalls and thus greatly improve the reverse current capacity. In the forward conduction and blocking state (VDS > 0 V and VGS > or = 0 V), the threshold voltage (VTH) and breakdown voltage (BV) of the FD-FinFET are hardly influenced by the FD because the FD channel is pinched off by the depletion effect. Therefore, a low VRT and a high VTH can be obtained synchronously. Consequently, when the gate biased-voltage (VGS) varies from 0 V to −3 V, the FD-FinFET can keep a low VRT of 0.49 V, while the VRT of the Con. FinFET rises significantly from 1.11 V to 4.11 V. Besides, it exhibits a high BV of 1725 V. The proposed structure not only avoids the difficulty of p-type doping, but also provides a new design concept to obtain a low reverse conduction loss, maintaining high forward conduction and blocking performances.

A Novel Controllable Hybrid-Anode Algan/Gan Field-Effect Rectifier with Low Operation Voltage

A novel hybrid-anode AlGaN/GaN field-effect rectifier with low operation voltage

A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology

High-performance AlGaN∕GaN Lateral Field-Effect Rectifiers Compatible with High Electron Mobility Transistors

Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode

An Ultralow Turn-On GaN Lateral Field-Effect Rectifier With Schottky-MIS Cascode Anode

Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier with Low Onset Voltage and Improved Breakdown Voltage

Investigation on the Device Geometry-Dependent Reverse Recovery Characteristic of AlGaN/GaN Lateral Field-Effect Rectifier (L-FER)

Theoretical Investigation of High-Voltage Self-Charge-Balanced Superjunction AlGaN/GaN Heterojunction Field Effect Transistors with Nanoscale Polarization-Doped AlGaN Layer

Algan/Gan Dual-Channel Lateral Field-Effect Rectifier with Punchthrough Breakdown Immunity and Low On-Resistance

Hemt-Compatible Lateral Field-Effect Rectifier Using Cf4 Plasma Treatment

Novel High Voltage RESURF Al GaN/GaN HEMT with Charged Buffer Layer

Temperature Dependence of AlGaN/GaN HEMT-compatible Lateral Field Effect Rectifier

Demonstration of Β-Ga2o3 Heterojunction Gate Field-Effect Rectifier

High Voltage AlGaN/GaN HFET Employing Low Taper Angle Field-Plate for Stable Forward Blocking Capability

High Voltage GaN Vertical FinFET with a Compatible Integrated Fin Diode for Low Reverse Conduction Loss.

Demonstration of β-Ga 2 O 3 Heterojunction Gate Field-Effect Rectifier

Investigation of Device Geometry- and Temperature-Dependent Characteristics of Algan/Gan Lateral Field-Effect Rectifier

Proposal of a novel GaN/SiC hybrid FET (HyFET) with enhanced performance for high-voltage switching applications

A Variable Nanotrench Structure for Electric Field Modulation in AlGaN/GaN Devices

A Split Gate Vertical GaN Power Transistor with Intrinsic Reverse Conduction Capability and Low Gate Charge