Abstract:Fig. 1 Top view of (0001) GaN with three possible sites that can accommodate fluorine ions. Fluorine plasma treatment is a robust technology to realize the enhancement-mode AlGaN/GaN high electron mobility transistor (HEMT) by delivering a threshold voltage shift of HEMT as large as +5 V [1]. The negatively charged fluorine ions, which are implanted into the top AlGaN barrier, can effectively deplete the electrons in the channel. For practical implementation of the fluorine plasma treatment, an important issue to address is the stability of the fluorine ions, which is fundamentally determined by the potential energy of fluorine ions in III-nitride material systems. In this work, we studied the fluorine ions’ stability by calculating the potential energy of fluorine ions in AlGaN/GaN with an approach based on molecular dynamics (MD) simulation. MD method can provide a kinetic and real-time simulation of fluorine ions as they move around the III-nitride materials. This simulation, if carried out by first principle calculation, would be very computation intensive. We focused on three designated sites for fluorine ions: interstitial site I, substitutional group-III atom site S(III) and substitutional group-V atom site S(V), as shown in Fig. 1. The potential energy of a fluorine ion at S(III) is found to be the lowest in GaN, suggesting that fluorine ions most likely end up at S(III) sites. It is identified that the lowest energy barrier (1.1 eV) exits between the I and S(III) sites in Al0.25Ga0.75N, while the energy barrier between I-S(V) and I-I are at least 2eV and 4 eV, respectively. The fluorine ions’ movement between S(III) and I sites is therefore identified as the dominant physical process associated with the fluorine diffusion in III-nitride material.

Molecular Dynamics Simulation Study on Fluorine Plasma Ion Implantation in AlGaN/GaN Heterostructures

Atomistic Modeling Of Fluorine Implantation And Diffusion In Iii-Nitride Semiconductors

On The Stability Of Fluorine Ions In Algan/Gan Heterostructures: A Molecular Dynamics Simulation Study

On the Stability of Fluorine Ions in AlGaN/GaN System: a Theoretical Study

The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method

Self-aligned enhancement-mode AlGaN/GaN HEMTs using 25 keV fluorine ion implantation

Persistent Photoconductivity and Carrier Transport in AlGaN∕GaN Heterostructures Treated by Fluorine Plasma

Fluorine IMP effect on negative bias temperature instability and process induced defects

Fluoride monolayer doping in GaN/AlGaN/GaN semiconductor

Characterization of Fluorine‐plasma‐induced Deep Centers in AlGaN/GaN Heterostructure by Persistent Photoconductivity

First-principles calculations for effects of Fluorine impurity in GaN

A Multiscale Simulation on Aluminum Ion Implantation-Induced Defects in 4H-SiC MOSFETs

Diffusion Mechanism And The Thermal Stability Of Fluorine Ions In Gan After Ion Implantation

Atomic displacement threshold energies and defect generation in GaN, AlN, and AlGaN: A high-throughput molecular dynamics investigation

Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs

First-principles study of alloying effects on fluorine incorporation in Al x Ga 1-x N alloys

Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si 3 N 4 Gate Dielectric and Standard Fluorine Ion Implantation

Control of Threshold Voltage of Algan/Gan Hemts by Fluoride-Based Plasma Treatment: from Depletion Mode to Enhancement Mode

First-principles study of alloying effects on fluorine incorporation in Al<sub> <i>x</i> </sub>Ga<sub>1−<i>x</i> </sub>N alloys

Enhancement-Mode Algan/Gan Hemts Fabricated by Standard Fluorine Ion Implantation with A Si3n4 Energy-Absorbing Layer

Integration of Enhancement and Depletion‐mode AlGaN/GaN MIS‐HFETs by Fluoride‐based Plasma Treatment