Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Diffusion Mechanism And The Thermal Stability Of Fluorine Ions In Gan After Ion Implantation

Study Of Diffusion And Thermal Stability Of Fluorine Ions In Gan By Time-Of-Flight Secondary Ion Mass Spectroscopy

On the Stability of Fluorine Ions in AlGaN/GaN System: a Theoretical Study

On The Stability Of Fluorine Ions In Algan/Gan Heterostructures: A Molecular Dynamics Simulation Study

Fluorine IMP effect on negative bias temperature instability and process induced defects

Fluorine in Silicon: Diffusion, Trapping, and Precipitation

Molecular Dynamics Simulation Study on Fluorine Plasma Ion Implantation in AlGaN/GaN Heterostructures

Atomistic Modeling Of Fluorine Implantation And Diffusion In Iii-Nitride Semiconductors

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Structural and Electrical Characterizations of Si-implanted GaN with a High Dose at Elevated Temperatures

First-principles calculations for effects of Fluorine impurity in GaN

Thermal Conductivity at Finite Temperature and Electronic Structure of the Ultra-Wide Band Gap Fluorinated 2D GaN.

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

High Pressure Processing of Ion Implanted GaN

Enhancement Mode AlGaN/GaN HEMTs by Fluorine Ion Thermal Diffusion with High V Th Stability

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Improving the Manufacturability of Low-Temperature GaN Ohmic Contact by Blocking the Fluorine Ion Injection

Unidirectional Expansion of Lattice Parameters in GaN Induced by Ion Implantation

Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs

Crystallization behavior and defect analysis on induction growth of hexagonal GaN in isothermal relaxation

Si Implantation in GaN at Elevated Temperatures