Ferroelectric Properties of BiFexCr1-xO3 Thin Film Formed on Pt Electrodes

Zhiyong Zhong,Yoshihiro Sugiyama,Hiroshi Ishiwara

DOI: https://doi.org/10.1109/icsict.2008.4734627

2008-01-01

Abstract:BiFexCr1-xO3 (x=0.4 similar to 0.6) thin films were formed on Pt/Ti/SiO2/Si (100) substrates by chemical solution deposition. The spin-coated, dried and calcined films were finally annealed in a mixed gas of N-2 and O-2 (N-2:O-2=4:1) at 450, 500, 550 and 600 degrees C. X-ray diffraction analysis revealed that polycrystalline grains of BiFeO3 and BiCrO3 coexist in the films, and that double perovskite Bi2FeCrO6 crystallites might also be included. The leakage current density measured at room temperature was lower than 1x10(-5) A/cm(2) in the films annealed at 450 degrees C. The remanent polarization increased with increase of the Fe ratio, and a large value of 45 mu C/cm(2) was obtained in the BiFe0.6Cr0.4O3 thin film, when it was measured at 1.9 MV/cm and 50 kHz. Fatigue property was also improved and no degradation of the remanent polarization was observed in the BiFe0.4Cr0.6O3 film by switching cycles up to 1x10(8).