Off-state leakage current in nano-scale MOSFET with Hf-based gate dielectrics

Jian-Hong Yang,Gui-Fang Li,Hui-Lan Liu
DOI: https://doi.org/10.1109/INEC.2008.4585692
2008-01-01
Abstract:The off-state gate current, drain current and substrate current were simulated, exhibiting that the edge direct tunneling current (IEDT) from the gate overlap to the source and drain extension prevails over conventional gate induced drain leakage current (IGIDL), subthreshold leakage current (ISUB), band-to-band tunneling current (IBTBT) and IEDT dominates off-state leakage current. The Id-Vg characteristics for the 50 and 90 nm MOSFETs were investigated, it was observed that a large increase in off-state leakage current (Ioff) occurs for smaller devices due to increase in edge direct tunneling current at high Vdd. IEDT with various gate dielectrics including SiO2, Si3N4 and HfO2 were compared, which indicates that Ioff decreases because of reducing IEDT by increasing gate dielectrics permittivity % The Id-Vg characteristics for various gate dielectrics were studied, we found that off-state leakage current arises because of fringing induced barrier lowering when KGt25. This paper also examined HfSiON and HfLaO gate dielectrics and the IEDT with them is 2-5 orders of magnitude lower than that of SiO2 and FIBL is small. Moreover, HfLaO and HfSiON have superior thermal stability, they are promising gate dielectrics.
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