Abstract:Resistive random access memories with self-rectifying behaviors, in which the sneak-path issue in passive crossbar arrays can be alleviated without additional access devices, have been investigated recently. The applications of p-type transparent oxide semiconductors as a memory medium will pave the way for realizing all-transparent memories and integrating on the complementary metal-oxide-semiconductor devices. Here, Ag-based p-type delafossite AgCr1−xMgxO2 thin films were prepared onto n-Si wafers to investigate the resistive switching (RS) performance. Bipolar RS with self-rectifying behaviors were observed in the Au/AgCr0.92Mg0.08O2/n−Si sandwich structure, showing improved rectification ratio, On/Off ratio, and switching durability. The change of the oxygen vacancy concentration resulting from Mg doping plays a key role in determination of the RS. The intrinsic rectifying behavior in the low resistance state is attributed to the existence of a Schottky-like barrier in the AgCr1−xMgxO2/n−Si p-n heterojunction. The RS behavior originates from the modification of the barrier, which is induced by the trapping/detrapping of charge carriers in oxygen vacancies at the interface. The results will provide novel RS devices based on p-type transparent delafossite thin films with a self-rectifying feature.

Amorphous SiC based non-volatile resistive memories with ultrahigh ON/OFF ratios

Nonpolar Resistive Switching in Cu/SiC/Au Non-Volatile Resistive Memory Devices

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Cmos Compatible Nonvolatile Memory Devices Based On Sio2/Cu/Sio2 Multilayer Films

Resistive Switching Behavior of Ag/Mg 0.2 Zn 0.8 O/ZnMn 2 O 4 /p + -Si Heterostructure Devices for Nonvolatile Memory Applications

Large conductance switching nonvolatile memories based on p-ZnS nanoribbon/n-Si heterojunction

Unipolar Resistive Switching Effects Based on Al/ZnO/P ++ -Si Diodes for Nonvolatile Memory Applications

Unipolar Resistive Switching with Forming-Free and Self-Rectifying Effects in Cu/HfO2/n-Si Devices

Unipolar Resistive Switching in Au/Cr/Mg0.84Zn0.16O2−δ /P+-Si

Bipolar Resistive Switching in Cu/Aln/Pt Nonvolatile Memory Device

Amorphous‐Si‐Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window

Resistive Switches and Memories from Silicon Oxide.

Nonpolar Electrical Switching Behavior in Cu–Si(Cu)Ox–Pt Stacks

Resistive Switching with Self-Rectifying Behavior in Cu/Siox/Si Structure Fabricated by Plasma-Oxidation

Dual Resistive Switching Characteristics in Cu$_{x}$Si$_{y}$O Resistive Memory

Low Power Resistive Switching Phenomena In Ti/Sin/Au Memory Device

Multifunctional Analog Resistance Switching of Si3N4-Based Memristors Through Migration of Ag+ Ions and Formation of Si-Dangling Bonds

Bipolar Resistive Switching with Self-Rectifying Behaviors in P-Type AgCr1−xMgxO2 Thin Films

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

Unipolar Resistive Switch Based on Silicon Monoxide Realized by Cmos Technology

Nanoporous Silicon Oxide Memory