Abstract:Existing high-power semiconductor lasers widely use asymmetric large cavity structures or designs with short cavity lengths to enhance device performance, inevitably increasing the device threshold current density and suppressing further improvement of device performance. We have utilized rate equations analysis to investigate the impact of threshold current density on the threshold characteristic temperature of GaAs-based laser diodes at short wavelengths. A simplified carrier escape model has been employed, which is more accurate compared to the classical model of thermal carrier emission. Compared to long-wavelength laser diodes, short-wavelength laser diodes exhibit higher temperature stability due to their smaller Auger recombination coefficients. Increased internal losses caused by carrier escape and decreased injection efficiency are the main reasons for the decrease in threshold characteristic temperature with increasing temperature. The increase in threshold significantly enhances carrier escape, leading to a decrease in the threshold characteristic temperature and an increase in sensitivity to temperature. Moreover, high thresholds limit the increase in the device's decoupling factor, causing a decrease in current inject efficiency and further degradation of device performance. By increasing the barrier height, carrier escape can be effectively suppressed, thereby enhancing device performance. The simulation results agree well with the experimental data of InAlGaAs laser diodes at a wavelength of 780 nm, accurately predicting the threshold characteristics of devices with different cavity lengths at various temperatures.

Auger Recombination is NOT Necessary to Explain the Temperature Dependence of Threshold in p-doped Quantum Dot Lasers

Observation and Modeling of a Room-Temperature Negative Characteristic Temperature 1.3-$\Mu$m P-Type Modulation-Doped Quantum-Dot Laser

Photon Coupling Mechanism in 1.3-&Amp;#x003bc;m Quantum-Dot Lasers

Effects of Photon and Thermal Coupling Mechanisms on the Characteristics of Self-Assembled Inas/Gaas Quantum Dot Lasers

Temperature-dependent large signal modulation and Auger recombination in In/sub 0.4/Ga/sub 0.6/As quantum-dot lasers

Temperature Induced Self-Compensating Defect Traps and Gain Thresholds in Colloidal Quantum Dots.

High Performance 1.3μm InAs/GaAs Quantum Dot Lasers with Low Threshold Current and Negative Characteristic Temperature

Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers

Temperature Quenching of Tunable Tunneling Recombination Emission in AlxGa1−xAs N-I-p-i Doping Structures

Quasi-continuous-wave operation of AlGaAs/GaAs quantum cascade lasers

Relation between photocurrent and DLTS signals observed for quantum dot systems

Simple Theoretical Model for the Temperature Stability of InAs/GaAs Self-Assembled Quantum Dot Lasers with Different P-Type Modulation Doping Levels

Thermal photon statistics in laser light above threshold

P -Doped 1.3μm InAs∕GaAs Quantum-Dot Laser with a Low Threshold Current Density and High Differential Efficiency

High Temperature Characteristics Of A 2 M Ingasb/Algaassb Passively Mode-Locked Quantum Well Laser

1.3 [micro sign]m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

Temperature- and Current-Dependent Spontaneous Emission Study on 2 Μm InGaSb/AlGaAsSb Quantum Well Lasers

Temperature dependence of oscillation wavelength in 808 nm InGaAsP SQW lasers

Extraction-Dominated Temperature Degradation of Population Inversion in Terahertz Quantum Cascade Lasers.

Analysis of Threshold Characteristics of Short-wavelength Semiconductor Lasers

Anomalous Temperature Effect in Weakly Coupled Superlattices: Carrier Transport in a THz Quantum Cascade Laser