Abstract:The application of conventional power metal-oxide-semiconductor field-effect transistor (MOSFET) is limited by the famous one-dimensional "silicon limit" (1D-limit) in the trade-off relationship between specific on-resistance (RSP) and breakdown voltage (BV). In this paper, a new power MOSFET architecture is proposed to achieve a beyond-1D-limit RSP-BV trade-off. Numerical TCAD (technology computer-aided design) simulations were carried out to comparatively study the proposed MOSFET, the conventional power MOSFET, and the superjunction MOSFET. All the devices were designed with the same breakdown voltage of ~550 V. The proposed MOSFET features a deep trench between neighboring p-bodies and multiple p-islands located at the sidewall and bottom of the trench. The proposed MOSFET allows a high doping concentration in the drift region, which significantly reduces its RSP compared to the conventional power MOSFET. The multiple p-islands split the electric field into multiple peaks and help the proposed MOSFET maintain a similar breakdown voltage to the conventional power MOSFET with the same drift region thickness. Another famous device technology, the superjunction MOSFET (SJ-MOSFET), also breaks the 1D-limit. However, the SJ-MOSFET suffers a snappy reverse recovery performance, which is a notorious drawback of SJ-MOSFET and limits the range of its application. On the contrary, the proposed MOSFET presents a superior reverse recovery performance and can be used in various power switching applications where hard commutation is required.

Forward and reverse biased safe operating areas of the COOLMOSTM

Behaviour of the CoolMOS Device and Its Body Diode

New "silicon Limit" of Power Devices

A Novel Lateral Power MOSFET with Ultra-low Energy Consumption and Extraordinary Robustness

High-speed power MOSFET with low reverse transfer capacitance using a trench/planar gate architecture

New Power MOSFET with Beyond-1D-Limit RSP-BV Trade-Off and Superior Reverse Recovery Characteristics.

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect

A Novel Double-sided Cooling 3L-ANPC SiC MOSFET Power Module with Interleaved Layout

Fabricating and TCAD Optimization for a SiC Trench MOSFET With Tilted P-Shielding Implantation and Integrated TJBS

Sub-Boltzmann Switching, Hysteresis-Free Charge Modulated Negative Differential Resistance FinFET

TCAD Analysis of Single-Event Burnout Hardness for an Improved CoolSiC Trench MOSFET

Theory Of The Switching Response Of Cbmost

Characterization of Electro-Thermal Coupling Behaviors and Safe Operating Area of SiC MOSFET Modules in Pulsed Power Applications

New Cmos Compatible Super-Junction Ldmost with N-Type Buried Layer

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance

A Novel SiC Trench MOSFET Structure with Enhanced Short Circuit Robustness

SiC Trench MOSFET with Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss

An Ultra-Low Specific ON-Resistance LDMOST With Self-Driven Split Gate

Optimization of the Specific On-Resistance of the COOLMOS/sup TM/

Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET